Welcome to Feihong Semiconductor official website, pure domestic IGBT e-mail: feihongbcok@gmail.com

FHS250N1F2Amos Transistor: Detailed Explanation of the Strengthened Upgrading Selection for Energy Storage Power Supply Circuit

Article Category:MOS transistor information Release time:2025-01-31 Number of page views:545 Share:
With the rapid upgrade of technology, the demand for next-generation power semiconductor devices is continuously accumulating in various departments and industries. Especially in industries such as energy storage power supplies and power inverters, the demand for devices that control and regulate current—MOSFETs—is eagerly awaited. It has become extremely important to select a domestic model to replace the Infineon IPP030N10N3G for use in energy storage power supply circuits. In today's MOSFET market, the defects in low-quality products involve issues like shortened lifespan and electromagnetic interference. These defects not only greatly affect the normal operation of energy storage power equipment but also lead to increased maintenance costs. Therefore, finding and comparing high-quality replacement MOSFET products has become extremely important. When energy storage power electronic engineers are replacing the Infineon IPP030N10N3G MOSFET, they need to pay attention to key aspects globally. For example, the performance parameters of the MOSFET, such as whether the rated current can reach 250A and whether the rated voltage can reach 100V, are closely related to the device's operational efficiency. Another consideration is that the gate threshold voltage and breakdown voltage (BVCES) are also critical factors. The circuit diagram of the energy storage power supply previously used the Infineon IPP030N10N3G MOSFET. Currently, it is expected to search for a domestic MOSFET agent selling the FHS250N1F2A MOSFET for use in replacing the Infineon IPP030N10N3G MOSFET in the energy storage power supply. 1. N-channel enhancement-mode field-effect transistor 2. Maximum pulse drain current: 1000A 3. With 250A current and 100V voltage 4. Static on-resistance RDS(ON): 2.5mΩ (Typ), 3.0mΩ (Max) 5. 100% thermal resistance tested 6. VGS(th): 2.0-4.0V Feihong Semiconductor's FHS250N1F2A type MOSFET brings enhanced control capabilities to the energy storage power supply circuit with its combination of 250A and 100V, solving problems like product shortening lifespan and electromagnetic interference. The development of electronic products such as energy storage power supplies is no longer difficult, thanks to Feihong Semiconductor's FHS250N1F2A type MOSFET providing solutions for lithium battery protection, DC-AC inverters, etc. Guaranteed component supply, call 400-831-6077 now to experience the service via the trial sample hotline!

*All relevant knowledge of this site is for your reference and learning purposes only. Part of it comes from the Internet, and its copyright belongs to the original author and

Fill in products and get free samples of products

*Your salutation

*Contact Information

*Product Type

*Sample type

Prompt

Submitted successfully

A specialist will contact you later, please pay attention to it.~

Return to Cart View more products

popular product

Feihong Semiconductor has provided one-stop MOS tube solutions for enterprises in the field of 10000 electronics. | e-mail : feihongbcok@gmail.com
Feihong Semiconductor has provided one-stop MOS tube solutions for enterprises in the field of 10000 electronics. 关闭

put it away

Click to apply
Free sample