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FHS250N1F2AMOS Tube: Opening a New Chapter in the Design of Energy Storage Power Supply Circuit

Article Category:MOS transistor information Release time:2025-01-25 Number of page views:426 Share:
With the rapid improvement of technology, high-voltage and high-current switch devices are gradually becoming popular in various traditional industries. In fields such as energy storage power supplies and power management for wireless communication equipment, there is a strong demand for a device that can effectively control and regulate current — MOSFETs. Selecting a powerful domestic MOSFET to replace the Infineon IPP030N10N3G model is very important in the design of energy storage power supply circuits. In recent times, the MOSFET market has seen products with poor performance often exhibiting issues such as weak reliability, short product life, and poor heat dissipation, which not only seriously affect the normal operation of energy storage equipment but also increase maintenance costs. Therefore, finding a high-quality MOSFET replacement model is crucial. For energy storage power supply technicians, when replacing the Infineon IPP030N10N3G MOSFET model, it is necessary to carefully distinguish several key parameters. The first is the MOSFET's performance parameters, such as whether the rated current reaches 250A and whether the voltage reaches 100V, as these parameters are related to the device's operational efficiency. In response to the needs of energy storage power supply technicians, we highly recommend the MOSFET product FHS250N1F2A. It technically matches the Infineon IPP030N10N3G, with each parameter worth noting: 1. N-channel enhancement type 2. Maximum gate-source voltage: ±20V 3. Low on-resistance 4. Threshold voltage: 2.0-4.0V 5. Current capability: 250A, voltage capability: 100V 6. Static on-resistance RDS(ON): 2.5mΩ (Typ), 3.0mΩ (Max) The MOSFET controls properly and provides excellent quality in energy storage power supplies! Fei Hong Semiconductor highly recommends selecting the FHS250N1F2A MOSFET model to enhance the control capabilities of energy storage power supply circuits. This 250A, 100V MOSFET effectively addresses problems such as weak reliability, short product life, and poor heat dissipation. The FHS250N1F2A MOSFET provided by Fei Hong Semiconductor is an excellent choice for electronic product manufacturers in the energy storage power supply, switching power supply, and outdoor energy storage power supply sectors, solving various problems in circuit development. To ensure component supply, please contact the free trial sample hotline: 400-831-6077!

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