They say that technological innovation is endless, and this is particularly evident in Lvyuan Haina. They pioneered the use of low-impedance silicon carbide MOSFETs instead of traditional IGBTs in the high-frequency inverter section, successfully developing a high-power silicon carbide synchronous rectifier power supply that significantly reduces losses in this section, increasing the overall efficiency of the switching power supply to 96%.

The above case makes us more aware that continuous innovation based on market demand is necessary in circuit design. Feihong Semiconductor is also continuously innovating our MOSFETs, achieving replacement usage for models such as HY3906P, IRFB7537PBF, and CS160N06, which is the FHP230N06V MOSFET model.

As an N-channel enhancement mode field-effect transistor, with its current and voltage characteristics of 230A and 60V, electronic engineers can not only apply it in high-frequency switch power supplies but also in vehicle-borne high-frequency inverters, outdoor energy storage power supplies, industrial frequency inverters, UPS uninterruptible power supplies powered by 24V batteries, and other application scenarios.

Furthermore, it adopts advanced trench technology, reducing conduction loss, improving switching performance, and increasing avalanche energy.

This transistor can be used in various power switch circuits to achieve system miniaturization and high efficiency. The product has a TO-220 package, meets JEDEC standards, and is environmentally friendly, complying with RoHS and REACH standards, and free of halogens.

Therefore, it not only achieves the functions of traditional MOSFET models such as HY3906P, IRFB7537PBF, and CS160N06 but also has a lower on-resistance compared to HY3906P and CS160N06, reducing conduction losses and improving the quality factor FOM(RDSON*Qg), thus having superior performance.

Compared with IRFB7537PbF, it provides a higher cost-effective domestic alternative product.

The detailed parameters of the FHP230N06V field-effect transistor are: Vgs(±V): 20; VTH(V): 3; ID(A): 230; BVdss(V): 60. RDS(on) = 2.5mΩ(typ)@VGS=10V, RDS(on) = 3.0mΩ(max)@VGS=10V.

For further details about its parameters, you can communicate with the technical colleagues at Feihong Semiconductor. We are continuously innovating products to help factories and enterprises obtain high-quality MOSFETs and solve complex problems in circuit design!

Using a 230A, 60V MOSFET for replacement is crucial to selecting the right model for high-frequency switch power supplies. Feihong Semiconductor's MOSFETs are not only widely applied in high-frequency switch power supplies but also in outdoor energy storage power supplies, inverters, high-frequency switch power supplies, and other end applications.

We provide high-quality products and配套services to domestic electronic product manufacturers. In addition to providing free samples, we can also customize MOSFET products according to customer needs. Simply search for "Feihong Semiconductor" on Baidu to find us. Free sample hotline: 400-831-6077.