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Challenges the pure domestic advanced technology of foreign brands, FHS200N6F3A parameters effect of high power MOS transistor

Article Category:MOS transistor information Release time:2025-01-14 Number of page views:382 Share:
Following the continuous upgrade of technology, high-power devices are being applied in various technical industries. In fields like 7-series lithium battery protection boards and home solar power generation systems, a device capable of effectively controlling and regulating current is immediately needed — a high-power MOSFET. Choosing an innovative purely domestic high-power MOSFET device to replace the IPP04N06N3 model is extremely important in the design of 7-series lithium battery protection board circuits. In the high-power MOSFET market, poor product quality poses daily risks including efficiency decline, electromagnetic noise, and low heat dissipation capabilities. These hazards not only severely interfere with the normal application of 7-series lithium battery protection boards but also increase maintenance costs. Therefore, choosing high-quality high-power MOSFET replacement products is crucial. When electronic designers of 7-series lithium battery protection boards choose to replace the IPP04N06N3 model high-power MOSFET, they need to focus on several core characteristics. First, the performance parameters of the high-power MOSFET are significant, such as whether the current can reach 200A and the voltage can reach 60V, etc. These parameters directly affect the device's working efficiency. Additionally, the breakdown voltage (BVCES) and current rise rate are key indicators. The circuit diagram of the 7-series lithium battery protection board manufacturer previously used the IPP04N06N3 model MOSFET. Currently, there is a plan to find a purely domestic high-power MOSFET manufacturer to supply the FHS200N6F3A model high-power MOSFET for replacing the IPP04N06N3 model MOSFET in the 7-series lithium battery protection board. 1. Avalanche Current: 28A 2. N-channel Field Effect Transistor 3. Threshold Voltage VGS(th): 2.0-4.0V 4. Static On-resistance: 2.85mΩ (Typ), 3.5mΩ (Max) 5. With 200A current, 60V voltage 6. Maximum Gate-Source Voltage: ±20V Customers have a very high recognition of the FHS200N6F3A model high-power MOSFET, which is an excellent high-power MOSFET star product! To enhance the power switch performance of the 7-series lithium battery protection board circuit, Feihong Semiconductor is willing to recommend the selection of the FHS200N6F3A high-power MOSFET model. This high-power MOSFET with a rated current of 200A and a rated voltage of 60V can truly solve problems such as product efficiency decline, electromagnetic noise, and low heat dissipation capability. 7-series lithium battery protection board production factories choose Feihong Semiconductor as the high-power MOSFET manufacturer, fully committed to providing the most reliable component supply guarantee for electronic manufacturing factories such as drive motors and portable energy storage power supplies. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial sample hotline: 400-831-6077!

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