The ultra-low internal resistance SGTMOSFET is the core functional module of the uninterruptible power supply. Find out which ultra-low internal resistance SGTMOSFET factories can obtain a model of SGTMOSFET that can replace IPP045N10N3G for use in the circuit diagram of the uninterruptible power supply. At present, the ultra-low internal resistance SGTMOSFET product faces problems such as low reliability, poor heat dissipation effect, and short product life. These directly control the reliable operation of the uninterruptible power supply equipment. It is very important to adopt high-quality products that can replace the ultra-low internal resistance SGTMOSFET. When an uninterruptible power supply electronic designer uses the IPP045N10N3G model ultra-low internal resistance SGTMOSFET for replacement, multiple key points need to be carefully evaluated. First, the performance parameters of the ultra-low internal resistance SGTMOSFET are extremely important, for example, whether the rated current can achieve 172A, whether the voltage can achieve 100V, etc. The mentioned parameters directly control the efficiency of the device's operation. In this regard, short-circuit tolerance (ShortCircuitCapability) and voltage rise rate are also primary concerns. In practical cases, FHP170N1F4A has successfully replaced IPP045N10N3G and received widespread promotion among many domestic uninterruptible power supply manufacturers. We recommend knowing its detailed parameters: 1. N-channel field-effect transistor 2. Current 172A, voltage 100V 3. VGS(th): 2.0-4.0V 4. Maximum gate-source voltage: ±20V 5. Static on-resistance RDS(ON): 3.6mΩ (Typ), 4.4mΩ (Max) 6. SGT process 7. Avalanche current: 25A To enhance the performance of the uninterruptible power supply in Jiangsu Province, find the FHP170N1F4A model ultra-low internal resistance SGTMOSFET. Mr. Hua, the head of the uninterruptible power supply manufacturers in Jiangsu Province, adopts Feihong Semiconductor due to its excellent service. To enhance the power switch efficiency of the uninterruptible power supply circuit, Feihong Semiconductor recommends the FHP170N1F4A model ultra-low internal resistance SGTMOSFET. With superior parameters of 172A and 100V, it easily solves the problems of low product reliability, poor heat dissipation effect, and short product life. To solve circuit development problems for electronic manufacturers, Feihong Semiconductor's FHP170N1F4A model ultra-low internal resistance SGTMOSFET is trustworthy. Applications such as switch power supplies and power adapters are guaranteed. Welcome to consult 400-831-6077 for free sample services!