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Under the domestic trend of localization, why is the FHS120N9F4A low on-resistance MOSFET suitable for portable power stations?

Article Category:MOS transistor information Release time:2024-12-27 Number of page views:361 Share:
With the continuous influx of capitalism, the demand for low on-resistance MOSFETs in portable energy storage power supplies is also increasing. How can portable energy storage power supply manufacturers select suitable low on-resistance MOSFETs for their circuit diagrams? The core problems of low on-resistance MOSFET products on the market, such as low efficiency, short product life, and reduced reliability, are closely related to the normal operation of portable energy storage power supply equipment. In this situation, ensuring the stable supply of high-quality low on-resistance MOSFETs is important for maintaining market share. For electronic engineers in the field of portable energy storage power supplies, when replacing the SVG095R0NT model with domestic low on-resistance MOSFETs, they need to carefully study several key considerations. First is the performance parameters of the low on-resistance MOSFET, such as whether the current reaches 147A and the voltage reaches 97V, as these listed parameters are closely related to the device's working efficiency. The previous circuit diagram of the portable energy storage power supply manufacturer used the SVG095R0NT model MOSFET. Considering the current situation and conditions, finding a domestic low on-resistance MOSFET distributor to supply the FHS120N9F4A model low on-resistance MOSFET for replacement of the SVG095R0NT model in portable energy storage power supplies. 1. N-channel enhancement-mode field-effect transistor 2. Extremely low input capacitance 3. Maximum gate-source voltage: ±20V 4. Threshold voltage VGS(th): 2.3-3.8V 5. Forward maximum pulse current: 480A 6. Has 147A current and 97V voltage 7. Static on-resistance RDS(ON): 4.8mΩ (Typ), 5.5mΩ (Max) The FHS120N9F4A model MOSFET has high recognition in the application of portable energy storage power supplies and provides stable control. Feihong Semiconductor highly recommends selecting the FHS120N9F4A model low on-resistance MOSFET to enhance the power switching capability of the portable energy storage power supply circuit. This 147A, 97V low on-resistance MOSFET solves the problems of low product efficiency, short product life, and reduced reliability. Portable energy storage power supply manufacturers choosing Feihong Semiconductor as the low on-resistance MOSFET agent will provide reliable component supply guarantees for electronic manufacturers of inverters, online interactive uninterruptible power supplies, etc. For more details, you can search "Feihong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077!

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