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How to correctly select the withstand voltage SGTMOSFET in electronic procurement? Case analysis of FHS170N8F3A

Article Category:MOS transistor information Release time:2024-12-21 Number of page views:517 Share:
Following the rapid development of technology, high-performance power switch devices are gradually becoming indispensable elements for various industries. The fields of lithium battery BMS protection boards and switch power supplies have an increasing demand for SGTMOSFETs with voltage endurance, which can flexibly control and regulate current. When designing a lithium battery BMS protection board circuit, selecting a perfect pure domestic SGTMOSFET device to replace the IPP037N08N3G model is important. The current market for SGTMOSFETs with voltage endurance faces multiple challenges, including poor quality issues such as electromagnetic noise, poor heat dissipation, and low efficiency. These not only disrupt the normal operation of lithium battery BMS protection boards but also increase maintenance costs. Under these conditions, selecting a good-quality SGTMOSFET with voltage endurance to replace the model parameters is crucial. When choosing the IPP037N08N3G model SGTMOSFET for the lithium battery BMS protection board, it is necessary to pay attention to its performance parameters, such as whether the current can reach 185 amperes and whether the rated voltage can reach 85 volts. These indicators are closely related to the operational efficiency of the lithium battery BMS protection board circuit. In addition to the above, high reliability and current rise rate are also core factors. International lithium battery BMS protection board manufacturers have generally chosen FHS170N8F3A as an effective replacement for IPP037N08N3G, achieving widespread application. I would like to share the detailed technical parameters with you: 1. Low gate charge 2. N-channel enhancement-mode field-effect transistor 3. 185A current, 85V voltage 4. Maximum pulse drain current: 480A 5. Highest gate-source voltage Vgs: ±20V 6. Static on-resistance RDS(ON): 2.95mΩ (Typ), 4mΩ (Max) With the guidance of pioneers, after learning that Feihong Semiconductor is a reliable manufacturer of SGTMOSFETs in Henan Province, the FHS170N8F3A model SGTMOSFET was selected for use in the lithium battery BMS protection board. To optimize the control performance of the lithium battery BMS protection board circuit, Feihong Semiconductor is willing to inform about selecting the FHS170N8F3A model SGTMOSFET. This SGTMOSFET with a rated current of 185A and a rated voltage of 85V can effectively resolve issues such as product electromagnetic noise, poor heat dissipation, and low efficiency. Feihong Semiconductor demonstrates meticulous responsibility in customizing SGTMOSFETs, providing high-quality parameters for the FHS170N8F3A model. It can provide proper component supply guarantees for fields such as lithium battery BMS protection boards and inverters. For more details, you can search "Feihong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077!

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