The field-effect transistor (FET) is the core functional module of the BMS. Subsequently, it is necessary to identify which FET manufacturers can provide suitable FET products for BMS applications. Issues related to the quality of FETs, such as electromagnetic noise, low heat dissipation capability, and low efficiency, can affect the normal operation of the BMS. Therefore, finding superior quality alternative FET products becomes a priority. In BMS electronic engineering, the selection of the IPP041N04NG FET model requires engineers to focus on its performance indicators. For instance, whether the rated current can meet 200A or whether the rated voltage can reach 40V. These indicators mainly affect the device's working efficiency. The FHS200N4F3A FET product, widely used by BMS engineers in demanding applications, is technically comparable to the IPP041N04NG. Its detailed parameters are as follows: 1. N-channel enhancement-mode FET 2. Current capacity: 200A, Voltage rating: 40V 3. RoHS compliant 4. Maximum pulse drain current: 800A 5. VGS(th): 2.0-4.0V 6. RDS(ON): 2.4mΩ (Typ), 3.1mΩ (Max) 7. Maximum gate-source voltage Vgs: ±20V To enhance the performance of the BMS circuit, the FHS200N4F3A FET from Feihong Semiconductor ensures excellent performance with its 200A and 40V specifications, effectively addressing issues such as electromagnetic noise, low heat dissipation, and low efficiency. With the FHS200N4F3A FET from Feihong Semiconductor, developing BMS electronics becomes less challenging. It provides solutions for switch power supplies, DC-AC inverters, and more. With stable component supply, call 400-831-6077 now to experience the service!