With the continuous improvement and upgrading of technology, the demand for Insulated Gate Bipolar Transistors (IGBTs) in various economic industries has significantly increased. Of particular importance are industries such as switch power boards and boost converters, where there is an urgent need for devices that control and regulate current—namely, n-channel enhancement mode MOSFETs. It is crucial to find a pure domestic product capable of replacing the STP110N8F6 model for use in switch power board circuits. Currently, the low-end market for n-channel enhancement mode MOSFETs often features products with issues such as low reliability, low efficiency, poor heat dissipation, and declining brand reputation. These problems not only disrupt the normal operation of switch power board equipment but also increase maintenance costs. Therefore, pursuing high-quality n-channel enhancement mode MOSFET replacement models is essential. When electronic technicians for switch power boards replace the STP110N8F6 model n-channel enhancement mode MOSFET, they must focus on finding multiple key indicators. First and foremost, the performance parameters of the n-channel enhancement mode MOSFET are critical, such as whether the current can reach 120 amperes and the voltage can reach 85 volts. These parameters are closely related to the device's operational efficiency. Additionally, the saturation voltage drop (VCE(sat)) and temperature coefficient are also key factors, with superior saturation voltage drop (VCE(sat)) performance enhancing the quality of the switch power board. According to the unique needs of switch power board electronic technicians, FHD100N8F6A provides a professional solution for n-channel enhancement mode MOSFETs. Its technical specifications are largely identical to those of the STP110N8F6, with specific details considered in its parameters: 1. N-channel enhancement mode field-effect transistor 2. 120-ampere current, 85-volt voltage 3. Threshold voltage: 2.0–4.0V 4. Maximum gate-source voltage: ±20V 5. Static on-resistance: 5.3mΩ (Typ), 6.5mΩ (Max) 6. Fast switching capability 7. Maximum pulse drain current: 320A Therefore, to enhance the conversion current capability of the switch power board circuit, Feihong Semiconductor highly recommends selecting the FHD100N8F6A model n-channel enhancement mode MOSFET. This 120-ampere, 85-volt n-channel enhancement mode MOSFET effectively overcomes challenges such as low product reliability, inefficiency, poor heat dissipation, and declining brand reputation. Breaking through the bottlenecks in switch power board circuit development, the FHD100N8F6A model from Feihong Semiconductor, an n-channel enhancement mode MOSFET manufacturer, becomes the optimal strategy for switch power board production companies. A comprehensive upgrade in component supply is just a phone call away: 400-831-6077.