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Change the selection thinking of low RDS(on) MOSFET: Can FHP60N1F10A replace the parameters of STP80N10F?

Article Category:MOS transistor information Release time:2024-11-24 Number of page views:382 Share:
With the continuous advancement of technology, power electronic devices have gradually evolved into essential elements in various fields. The demand for low on-resistance MOSFETs that meet flexible current control and regulation is increasing in areas such as DC-AC inverters, communication equipment like routers and switches. When designing a DC-AC inverter circuit, it is crucial to select a powerful pure domestic low on-resistance MOSFET device to replace the STP80N10F model. Issues with the quality of low on-resistance MOSFETs, such as efficiency reduction, electromagnetic interference, and low reliability, can definitely affect the reliable operation of DC-AC inverters. Therefore, finding an excellent substitute low on-resistance MOSFET product is very important. When using the STP80N10F model low on-resistance MOSFET in DC-AC inverter electronics engineering, technicians need to pay close attention to its performance parameters, such as whether the rated current reaches 60A and whether the rated voltage reaches 100V. These parameters directly correspond to the operating efficiency of the DC-AC inverter circuit. In addition to what has been mentioned, the rise rate of voltage and current (di/dt) are also key factors. If Mr. Ban wants to find a pure domestic low on-resistance MOSFET manufacturer to supply the FHP60N1F10A model low on-resistance MOSFET for use in DC-AC inverters to achieve MOSFET replacement. 1. Current: 60A, Voltage: 100V 2. N-channel enhancement type 3. Static on-resistance: 10.2mΩ (Typ), 12mΩ (Max) 4. Maximum pulse drain current: 240A 5. Highest gate-source voltage Vgs: ±20V 6. Achieves extremely low RDSON on-resistance Fei Hong Semiconductor is very willing to inform users of the FHP60N1F10A model low on-resistance MOSFET to enhance the power switching capability of the DC-AC inverter circuit. This low on-resistance MOSFET with rated parameters of 60A and 100V truly solves problems such as reduced product efficiency, electromagnetic interference, and low reliability. The FHP60N1F10A model low on-resistance MOSFET supplied by Fei Hong Semiconductor is the preferred choice for manufacturers of electronic products such as DC-AC inverters, motor drives, and buck-boost type DC/DC converters to solve various problems in circuit development. For details on component supply, please contact the free trial sample hotline: 400-831-6077!

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