Which FET manufacturer can provide a replacement for the IPP041N04NG FET model to be used in the BMS circuit diagram? The general problems currently existing in the FET market include electromagnetic noise, product safety hazards, and poor heat dissipation. The quality of FETs is related to the normal startup of BMS, and the continuous supply guarantee is also related to market share. From this perspective, finding an excellent quality replacement FET product is extremely important. When replacing the IPP041N04NG FET model, BMS engineers need to carefully select multiple key conditions. First is the performance parameters of the FET, such as whether the current can reach 200A and whether the voltage can reach 40V. These parameters are related to the device's working efficiency. For BMS technicians, choosing the FHS200N4F3A FET is equivalent to choosing a solution strategy that matches the technical parameters of the IPP041N04NG, allowing you to pay close attention to detailed parameters: 1. RDS(ON): 2.4mΩ (Typ), 3.1mΩ (Max) 2. Has a current of 200A and a voltage of 40V 3. Maximum gate-source voltage Vgs: ±20V 4. Has a wide BV voltage range 5. N-channel enhancement type 6. VGS(th): 2.0-4.0V To enhance the control performance of the BMS circuit, Fei Hong Semiconductor recommends the FHS200N4F3A FET model. This FET with a rated current of 200A and a rated voltage of 40V can truly eliminate issues such as electromagnetic noise, product safety hazards, and poor heat dissipation. Fei Hong Semiconductor's FET solutions for BMS manufacturers are very satisfactory, and their service attitude is enthusiastic and proactive. They will continue to purchase the FHS200N4F3A FET model. For more details, you can search "Fei Hong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!