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LED Driver Selection Substitute Daquan recommend
In the electronic engineering of (PD) fast charging adapter, when selecting the ZMS100N10N medium and low voltage MOS tube, the designer needs to focus on its performance indicators, such as whether the rated current can meet 60A, whether the rated voltage can reach 100V, etc. These indicators are closely related to the work efficiency of the (PD) fast charging adapter circuit. Another consideration factor is that the off-state charge quantity and short-circuit endurance (ShortCircuitCapability) are also priority factors. A strong off-state charge quantity performance can improve the quality of the (PD) fast charging adapter.
International (PD) fast charging adapter production factories previously generally chose FHN60N1F10LA as an effective domestic alternative to ZMS100N10N, which could be widely used. I would like to recommend everyone to know its detailed technical parameters:
1. Current of 60A and voltage of 100V
2. Maximum pulse drain current: 240A
3. Static on-resistance (VGS=4.5V): 12.5mΩ (Typ), 15.5mΩ (Max)
4. VGS(th): 1.2-2.4V
5. Vgs: ±20V
6. N-channel enhancement-mode field-effect transistor
7. Excellent quality factor FOM (RDS(on)*Qg)
To improve the control efficiency of the (PD) fast charging adapter circuit, Feihong Semiconductor launched the FHN60N1F10LA type medium and low voltage MOS tube. With superior parameters of 60A and 100V, it easily solves unknown questions about poor product reliability and short product life.
To break through the bottleneck of (PD) fast charging adapter circuit development, the FHN60N1F10LA model from Feihong Semiconductor's medium and low voltage MOS tube manufacturer has become a wise decision for (PD) fast charging adapter production factories. Comprehensive upgrades in component supply are just a phone call away: 400-831-6077.









