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To quickly enhance the performance of the motor driver circuit, the FHD100N8F6A ultra-low on-resistance MOSFET has become the preferred choice for R&D.

Article Category:MOS transistor information Release time:2024-11-15 Number of page views:287 Share:
The rapid development of technology is driving the increasing demand for new-generation power semiconductor devices across various commercial industries, particularly in key sectors such as motor drivers and large servers and data storage equipment, where there is an urgent need for ultra-low on-resistance MOSFETs that can control and regulate current. In motor driver circuits, it is especially important to select a domestically produced ultra-low on-resistance MOSFET device with outstanding performance to replace the STP110N8F6 model. In today's society, the market for ultra-low on-resistance MOSFETs often has unreliable products, such as electromagnetic interference issues and poor heat dissipation, which not only affect the normal operation of motor driver equipment but also exacerbate maintenance costs. Therefore, finding high-end replacements for ultra-low on-resistance MOSFETs is crucial. For electronic designers of motor drivers, when replacing the ultra-low on-resistance MOSFET of the STP110N8F6 model, careful attention must be paid to multiple core attributes. The first is the performance parameters of the ultra-low on-resistance MOSFET, such as whether the rated current can reach 120A and the voltage can reach 85V, as these parameters are closely related to the device's work efficiency. According to the exclusive customization needs of motor driver electronic designers, FHD100N8F6A provides a professional solution for ultra-low on-resistance MOSFETs, with technical specifications consistent with those of STP110N8F6. For detailed parameters: 1. Achieves extremely low RDSON on-resistance. 2. Vgs: ±20V. 3. N-channel enhancement-mode field-effect transistor. 4. Maximum pulse drain current: 320A. 5. Has a current of 120A and a voltage of 85V. 6. RDS(ON): 5.3mΩ (Typ), 6.5mΩ (Max). Miss Gao considered selecting Feihong Semiconductor because the FHD100N8F6A model is used in motor drivers. Feihong Semiconductor is willing to share the selection of the ultra-low on-resistance MOSFET FHD100N8F6A to enhance the conversion current capability of the motor driver circuit. This 120A, 85V ultra-low on-resistance MOSFET effectively overcomes difficult problems such as product electromagnetic interference and poor heat dissipation. Motor driver production factories choose Feihong Semiconductor's ultra-low on-resistance MOSFET manufacturers to provide stable component supply guarantees for electronic manufacturing factories such as electric vehicles and portable energy storage power supplies. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!

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