With the continuous upgrade of technology, insulated gate bipolar transistors are widely adopted in various technical fields. In the MPPT controller and AC-DC switch power supply fields, an effective current control and regulation device - low and medium voltage MOSFETs are urgently needed by the MPPT controller. Replacing the HYG045N10NS1P model with an advanced domestic low and medium voltage MOSFET device is extremely important in the design of the MPPT controller circuit. In the low and medium voltage MOSFET market, unqualified products generally have disadvantages such as efficiency reduction, electromagnetic interference, and reliability degradation, which not only seriously disrupt the normal operation of the MPPT controller but also increase maintenance costs. For this reason, using high-quality low and medium voltage MOSFET replacement products is extremely important. In MPPT controller electronics engineering, engineers need to focus on the performance indicators of the HYG045N10NS1P low and medium voltage MOSFET model, such as whether the current can meet 172A, whether the voltage can reach 100V, etc., as these indicators are deeply related to the work efficiency of the MPPT controller circuit. It should be noted that the thermal resistance and the current rise rate (di/dt) are also key aspects; advanced thermal resistance performance can improve the quality of the MPPT controller. FHP170N1F4A has been selected by many foreign MPPT controller companies, replacing HYG045N10NS1P and widely applied. We recommend you carefully consider its detailed product specifications: 1. Static On-Resistance RDS(ON): 3.6mΩ (Typ), 4.4mΩ (Max) 2. Current: 172A, Voltage: 100V 3. Maximum Gate-Source Voltage Vgs: ±20V 4. Excellent Quality Factor FOM(RDSON*Qg) 5. N-channel Field Effect Transistor 6. Threshold Voltage: 2.0-4.0V To increase the power switching capability of the MPPT controller, Miss Xun from Feihong Semiconductor met the demand, so the FHP170N1F4A MOSFET model was adopted. To improve the power switching efficiency of the MPPT controller circuit, Feihong Semiconductor launched the FHP170N1F4A type low and medium voltage MOSFET. With superior parameters of 172A and 100V, it easily solves problems such as reduced product efficiency, electromagnetic interference, and reliability degradation. To solve circuit development problems for electronic enterprises, Feihong Semiconductor's FHP170N1F4A low and medium voltage MOSFET model is reliable. Applications such as audio amplifiers and inverters are guaranteed. Welcome to consult 400-831-6077 for free sample services!