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Replace the IXFK94N50P2 model MOS tube, low conduction is the key to improve the amplification efficiency of 1800W automobile power amplifier!

Article Category:Featured Articles Release time:2024-09-21 Number of page views:634 Share:

 As one of the engines driving the growth of China's new industries, automobiles directly drive the development of the entire industrial chain. Automotive amplifiers are among these drivers. So, how can we enhance the performance of automotive amplifiers?

 

Low on-resistance MOSFETs are certainly a key factor. Before the popularization of domestic products, everyone used the IXFK94N50P2 model MOSFET in 1800W car amplifiers. In the context where domestic products have become mature, choosing a domestically produced MOSFET that can replace the IXFK94N50P2 model becomes very important.


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Why low on-resistance? Because in the power amplification circuit of a 1800W car amplifier, selecting a MOSFET with low on-resistance and high input impedance can achieve efficient amplification at lower conduction losses during the amplification process of large power audio signals.

 

The FHK94N50A type field-effect transistor has gained market recognition because its parameter performance is perfectly suitable for use in 1800W car amplifiers. In addition to the basic parameters of 94A and 500V, it also possesses excellent product characteristics:

1. Low on-resistance and low Qg

2. High dv/dt tolerance capability

3. 100% DVDS thermal resistance test, good heat dissipation performance

4. 100% Rg tested

5. 100% EAS tested, high avalanche tolerance, strong impact resistance

6. High testing standards, 100% various parameter tests + VTH classification, good consistency of parameters

7. High reliability

8. Integrated fast recovery diode

 

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Of course, in addition to the excellent features of the product itself, the FHK94N50A can replace the IXFK94N50P2 high-voltage MOSFET model due to its excellent parameters:

 

1. N-channel enhancement-mode VDMOS-with frd

2. TO-264 package size suits the circuit

3. Vgs(±V):30;VGS(th):3.0-5.0V;

4. ID(A):94A;BVdss(V):500V

5. Maximum pulse drain current (IDM ):376A

6. Reverse transfer capacitance: 58pF

7. Static on-resistance RDS(on) = 65mΩ(MAX) @VGS = 10 V, RDS(on) =47mΩ(TYP) @VGS = 10 V

 

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Products from Hongfei Semiconductor have been validated by market applications. Besides this product being able to directly replace the IXFK94N50P2, engineers from Hongfei Semiconductor suggest that using four FHK94N50A type field-effect transistors along with eight FHA60F60CA type field-effect transistors in TO-247-2L packaging would yield better results.

 

Hongfei Semiconductor provides professional products for electronic manufacturers and offers one-stop service for power device procurement, always starting from user needs.

 

Its excellent manufacturing process and parameter performance make it better suited for 1800W car amplifiers, ensuring product reliability.

 

With rapid market iteration and technological advancement, choosing the right model is crucial. Hongfei Semiconductor’s MOSFETs are widely used in power circuits, smart home appliances, new energy electronics sectors: such as automotive electronics, electric bicycles, smart audio equipment, household appliances, LED lighting, chargers, computer power supplies, etc., providing high-quality products and services to domestic electronic product manufacturers. Besides offering free samples, they can also customize MOSFET products according to customer requirements. You can find us by searching “Hongfei Semiconductor” on Baidu, and the free sample hotline is 400-831-6077.

 

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