For brushless motor drivers requiring parameters of 185A and 85V for high-power MOSFETs, where can suitable high-power MOSFET products be selected? In the high-power MOSFET market, issues such as efficiency drops, brand reputation declines, and electromagnetic interference must not be overlooked to ensure the normal operation of brushless motor driver equipment. It is very important to search for better replacement high-power MOSFET products. For electronic designers working on brushless motor drivers, when replacing the STP170N8F7 high-power MOSFET model, multiple critical considerations should be taken seriously. The first is the performance parameters of the high-power MOSFET, such as whether the current can reach 185A and whether the voltage can reach 85V. These parameters are closely related to the device's work efficiency. Designers in autumn are searching for domestic high-power MOSFETs to replace the STP170N8F7 MOSFET model. They hope to find high-quality high-power MOSFETs with 185A and 85V. 1. Current of 185A and 85V voltage 2. N-channel field-effect transistor 3. Threshold voltage VGS (th): 2.0-4.0V 4. Maximum gate-source voltage: ±20V 5. RDS(ON): 2.95mΩ (Typ), 4mΩ (Max) 6. Excellent short-circuit resistance The FHP170N8F3A MOSFET model is robust and has good quality! Under this premise, it is hoped to enhance the power switch capability of the brushless motor drive circuit. Fei Hong Semiconductor highly recommends selecting the FHP170N8F3A high-power MOSFET model. This 185A, 85V high-power MOSFET effectively solves problems like product efficiency decline, brand reputation decline, and electromagnetic interference. Fei Hong Semiconductor provides the FHP170N8F3A high-power MOSFET model, which is the preferred choice for product manufacturers such as brushless motor drivers, automotive electronics, and buck-type DC/DC converters. It resolves various problems in circuit development. To ensure component supply, please contact the free trial hotline: 400-831-6077!