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In-depth analysis of the parameters of FHD110N8F5B medium and low voltage MOS tube, see how domestic products shake the global quality.

Article Category:MOS transistor information Release time:2024-08-28 Number of page views:557 Share:
Which medium and low voltage MOSFET factories can fully have MOSFET products that can replace the SVG095R0NT model for use in switch power supply modules? In the medium and low voltage MOSFET market, poor product quality often leads to defects such as poor reliability and electromagnetic interference. These defects not only hinder the normal use of switch power supply modules but also increase maintenance costs. Therefore, choosing high-quality medium and low voltage MOSFET replacement products is crucial. When electronic engineers of switch power supply module manufacturers replace the SVG095R0NT medium and low voltage MOSFET, they need to pay attention to many key features. For example, the performance parameters of medium and low voltage MOSFET: whether the rated current can reach 147A, whether the voltage can reach 85V, etc., all of which directly affect the device's working efficiency. In addition, the package type and fast recovery of reverse parallel connection are also priority items. The switch power supply module manufacturer previously used the SVG095R0NT MOSFET in their product circuit. Under the current situation, it is ideal to find a domestic medium and low voltage MOSFET factory to provide the FHD110N8F5B medium and low voltage MOSFET to replace the SVG095R0NT MOSFET in the switch power supply module. 1. Threshold voltage VGS(th): 2.0-4.0V 2. Reverse transfer capacitance: 23pF 3. Maximum gate-source voltage Vgs: ±20V 4. Has 147A current and 85V voltage 5. Fast switching capability 6. N-channel enhancement type To enhance the conversion current capability of the switch power supply module, FlyHong Semiconductor provides the solution and meets the requirements, thus choosing the FHD110N8F5B MOSFET model. To improve the conversion current efficiency of the switch power supply module circuit, FlyHong Semiconductor launched the FHD110N8F5B medium and low voltage MOSFET. With its superior parameters of 147A and 85V, it easily solves the problems of poor product reliability and electromagnetic interference. To solve the circuit development problems for electronic manufacturers, the FHD110N8F5B medium and low voltage MOSFET from FlyHong Semiconductor is reliable. It has guarantees for applications in automotive electronics and mobile energy storage power supplies. Please feel free to consult at 400-831-6077 for free sample services!

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