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The leader of domestic alternatives, FHA170N1F4A medium and low voltage MOS tube is not inferior to international models.

Article Category:MOS transistor information Release time:2024-08-17 Number of page views:850 Share:
With the continuous innovation of technology, the application of power electronic converter devices in various industries is changing rapidly. In industries such as solar inverters and DC/DC power supplies, solar inverter operators urgently need a device that can effectively control and regulate current - medium and low voltage MOSFETs. Choosing an excellent domestic medium and low voltage MOSFET device for the national replacement of IPP045N10N3G model is crucial in the design of solar inverter circuits. In the medium and low voltage MOSFET market, common problems with non-durable products include efficiency drop, low reliability, poor heat dissipation efficiency, electromagnetic interference, etc. These problems not only hinder the normal use of solar inverters but also lead to high maintenance costs. Therefore, choosing a flawless quality medium and low voltage MOSFET national replacement product is important. When electronic technicians in the solar inverter industry are replacing the IPP045N10N3G medium and low voltage MOSFET with a domestic alternative, they need to carefully check multiple key attributes. The first is the performance parameters of the medium and low voltage MOSFET, such as whether the rated current can reach 172A, whether the rated voltage can reach 100V, etc. These parameters are closely related to the device's work efficiency. FHA170N1F4A is a medium and low voltage MOSFET product suitable for solar inverter applications with strict requirements. It is technically well-matched to IPP045N10N3G, and detailed parameters can be found: FHA170N1F4A is a channel N-type enhancement-mode MOSFET with 172A, 100V, Vgs: ±20V, static on-resistance RDS(ON): 3.6mΩ (Typ), 4.4mΩ (Max); threshold voltage VGS(th): 2.0-4.0V; package form: TO-3PN/TO-247. Honghong Semiconductor tells us that choosing the FHA170N1F4A medium and low voltage MOSFET model can enhance the control capability of the solar inverter circuit. This 172A, 100V medium and low voltage MOSFET can fundamentally overcome issues like efficiency drop, low reliability, poor heat dissipation efficiency, and electromagnetic interference. To help electronics production companies overcome circuit development problems, Honghong Semiconductor's FHA170N1F4A medium and low voltage MOSFET model is reliable. Applications such as audio amplifiers and non-isolated DC converters are guaranteed. Welcome to consult 400-831-6077 for free sample services!

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