Low Rds(on) MOSFET is the main factor in BLDC drivers, so it's important to find a low Rds(on) MOSFET factory that can provide suitable products for BLDC drivers. Currently, the low Rds(on) MOSFET market has poor product quality with issues like electromagnetic interference and low heat dissipation efficiency. These problems not only disrupt the normal operation of BLDC driver equipment but also increase maintenance costs. Therefore, it is necessary to seek high-quality low Rds(on) MOSFET replacement models. When replacing the HY1906 low Rds(on) MOSFET, BLDC driver electronic engineers need to carefully study several key parameters. The first is the performance parameters of the low Rds(on) MOSFET, such as whether the current can reach 120A and the voltage can reach 70V, etc. These parameters are closely related to the device's work efficiency. In the selection by many foreign BLDC driver manufacturers, FHP120N7F6A was initially chosen to replace HY1906 and has been widely adopted. We recommend you to carefully review its detailed product specifications: 1. RDS(ON): 5.4mΩ (Typ), 6.4mΩ (Max) 2. Current: 120A, Voltage: 70V 3. N-channel enhancement mode field effect transistor 4. Avalanche current: 15A 5. SGT process 6. Vgs: ±20V 7. Threshold voltage VGS(th): 2.0-4.0V Low Rds(on) MOSFETs play a crucial role in stabilizing BLDC drivers. The quality is excellent! To improve the control performance of the BLDC driver circuit, Feihong Semiconductor recommends selecting the FHP120N7F6A low Rds(on) MOSFET model. This low Rds(on) MOSFET with a rated current of 120A and a rated voltage of 70V effectively solves problems like electromagnetic interference and low heat dissipation efficiency. Choosing the FHP120N7F6A low Rds(on) MOSFET from Feihong Semiconductor helps BLDC driver manufacturers solve circuit development problems and ensures stable component supply. Consultation hotline: 400-831-6077, free samples available!