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New Trends in Circuit Design, Analysis of the Advantage Parameters of Domestic FHS200N4F3A Voltage-Controlled Field-Effect Transistor

Article Category:MOS transistor information Release time:2024-08-13 Number of page views:663 Share:
With the continuous improvement and upgrading of technology, the application of high-performance power switching devices is gradually extended to various departments and industries. In fields such as BMS (Battery Management System), AC-DC converters, etc., the overall person in charge of BMS urgently needs a device that can effectively control and regulate current — namely, the voltage-tunable field-effect transistor. Selecting an excellent domestic voltage-tunable field-effect transistor device to replace the IPP041N04NG model is quite critical in the design of BMS circuits. Currently, the voltage-tunable field-effect transistor market often encounters issues such as shortened product life, electromagnetic noise, and poor heat dissipation, which not only seriously interfere with the normal operation of BMS equipment but also increase maintenance costs. Under these circumstances, finding a high-quality substitute for the voltage-tunable field-effect transistor is crucial. When replacing the IPP041N04NG model voltage-tunable field-effect transistor, BMS technicians need to pay attention to several key indicators. The first is the performance parameters of the voltage-tunable field-effect transistor, such as whether the current can reach 200A and whether the rated voltage can reach 40V, as these parameters are closely related to the device's work efficiency. Engineer Miao expects to find a domestic voltage-tunable field-effect transistor manufacturer to supply the FHS200N4F3A model voltage-tunable field-effect transistor for use in BMS, achieving the replacement of the field-effect transistor. 1. Maximum gate-source voltage: ±20V 2. N-channel field-effect transistor 3. Threshold voltage: 2.0-4.0V 4. Current capacity: 200A, voltage: 40V 5. Avalanche current: 20A 6. RDS(ON): 2.4mΩ (Typ), 3.1mΩ (Max) 7. RoHS compliant product Mature and stable, with excellent quality and long lifespan! To upgrade the power switch performance of the BMS circuit, Feihong Semiconductor recommends using the FHS200N4F3A voltage-tunable field-effect transistor. This voltage-tunable field-effect transistor with a rated current of 200A and a rated voltage of 40V effectively addresses issues such as product life reduction, electromagnetic noise, and poor heat dissipation. The development of electronic products like BMS is no longer difficult, thanks to Feihong Semiconductor's FHS200N4F3A voltage-tunable field-effect transistor providing solutions for inverters, UPS systems, etc. Component supply is reliable and orderly. Call now at 400-831-6077 to experience our service!

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