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Challenging the pure domestic advanced level of foreign brands, the parameter effects of the FHS110N8F5B mos tube are as follows:

Article Category:MOS transistor information Release time:2024-08-11 Number of page views:648 Share:
The continuous development of technology has been pushing the requirements for power electronic conversion devices in various industrial and commercial sectors to rise. It is worth noting that industries such as BMS protection boards, televisions, and audio systems have more urgent demands for MOSFETs capable of controlling and regulating current. Replacing the IPP052N08N5 model with a high-performance pure domestic MOSFET device in the BMS protection board circuit is particularly crucial. The existing situation in the MOSFET market faces multiple challenges, including low-end models with issues such as electromagnetic interference, efficiency degradation, and poor reliability. These not only seriously hinder the normal operation of BMS protection boards but also cause maintenance costs. Therefore, replacing them with high-level MOSFETs with equivalent parameter specifications is extremely critical. When replacing the IPP052N08N5 MOSFET model, the BMS protection board electronic engineers need to focus on many core parameters. For example, the performance parameters of the MOSFET: whether the rated current can reach 147A, whether the rated voltage can reach 85V, etc., all of these are closely related to the device's operational efficiency. It should be noted that the off-state charge (Qgd) and the saturation voltage drop (Vcesat) are also key factors. With the customization requirements of BMS protection board electronic engineers, FHS110N8F5B provides a professional MOSFET solution. Its technical specifications are equivalent to those of IPP052N08N5. Please refer to its detailed parameters: 1. Current rating of 147A and voltage rating of 85V. 2. Maximum forward pulse current: 480A. 3. Static ON-resistance RDS(ON): 4.4mΩ (Typ), 5.5mΩ (Max). 4. Threshold voltage VGS(th): 2.0-4.0V. 5. Vgs: ±20V. 6. N-channel field-effect transistor. 7. Low Crss (typical value 23pF). To enhance the control efficiency of the BMS protection board circuit, Fei Hong Semiconductor introduces the FHS110N8F5B type MOSFET. With its superior parameters of 147A and 85V, it easily overcomes issues such as electromagnetic interference, efficiency reduction, and poor reliability. Fei Hong Semiconductor demonstrates a strong service spirit in customizing MOSFETs, delivering high-quality parameters of the FHS110N8F5B model. It can provide comfortable component supply assurance for BMS protection boards and lithium battery protection fields. For more details, you can search "Fei Hong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077!

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