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FHD100N8F6A ultra-low RDS(on) MOSFET: brings upgrade to the PWM power circuit of the manufacturer.

Article Category:MOS transistor information Release time:2024-08-10 Number of page views:577 Share:
Which ultra-low on-resistance MOSFET manufacturers can fully replace the STP110N8F6 MOSFET model for use in pulse width modulation (PWM) power supply circuits? After all, ultra-low on-resistance MOSFETs are the core components of PWM power supplies. Today's quality issues with ultra-low on-resistance MOSFETs, such as efficiency drops, product safety hazards, and poor heat dissipation, pose threats to the normal operation of PWM power supply equipment. Therefore, finding a high-quality replacement model for the ultra-low on-resistance MOSFET is very important. In pulse width modulation power electronics engineering, engineers must focus on the performance indicators when selecting the STP110N8F6 ultra-low on-resistance MOSFET model. For example, whether the current meets 120A, and whether the rated voltage reaches 85V, etc. These indicators directly determine the device's working efficiency. FHD100N8F6A is an ultra-low on-resistance MOSFET product often used by PWM power supply electronic engineers who strictly control their designs. It is technically precisely compatible with STP110N8F6, and its detailed parameters are as follows: 1. Threshold voltage VGS(th): 2.0-4.0V 2. Static on-resistance RDS(ON): 5.3mΩ (Typ), 6.5mΩ (Max) 3. RoHS compliant product 4. Has a current capacity of 120A and a voltage rating of 85V 5. N-channel enhancement-mode field-effect transistor 6. Avalanche current: 20A 7. Maximum gate-source voltage Vgs: ±20V Hongfei Semiconductor provides a solution for PWM power supply manufacturers: the FHD100N8F6A ultra-low on-resistance MOSFET model with strong parameters of 120A and 85V. It will effectively enhance the control capability of the PWM power supply circuit and address issues such as reduced product efficiency, safety hazards, and poor heat dissipation. For electronic manufacturers seeking solutions for circuit development, Hongfei Semiconductor's FHD100N8F6A ultra-low on-resistance MOSFET model is trustworthy. Applications such as inverters and portable energy storage power supplies are also guaranteed. Please feel free to call 400-831-6077 for a free sample service!

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