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Performance upgrade of high-power MOSFET circuit—Performance replacement of FHP120N9F4A and SVG095R0NT

Article Category:MOS transistor information Release time:2024-07-12 Number of page views:567 Share:
The increasing development of technology has greatly increased the demand for high-power components in various emerging industries. It should be noted that fields such as energy storage power supplies and voltage stability in vehicle electronic systems are in greater need of high-power MOSFETs that can control and regulate current. In the circuit of energy storage power supply, it is extremely important to replace the SVG095R0NT model with a performance-excellent pure domestic high-power MOSFET component. At present, the inferior products in the high-power MOSFET market mostly have problems such as electromagnetic noise, low reliability, and declining brand reputation. These issues not only seriously affect the normal operation of energy storage power supply equipment but also increase maintenance costs. Based on these analyses, searching for high-standard replacement models for high-power MOSFETs is extremely important. In energy storage power supply electronics engineering, designers need to pay special attention to the performance indicators of the SVG095R0NT model high-power MOSFET. For example, whether the rated current can meet 147A, whether the rated voltage can reach 97V, etc., these indicators directly correspond to the device's working efficiency. Many global energy storage power supply manufacturers previously considered FHP120N9F4A as an alternative to SVG095R0NT and it can also be widely used. It is recommended that everyone fully understand its performance parameters: 1、100% passed UIS test 2、N-channel MOSFET 3、Maximum forward pulse current: 480A 4、Current 147A, Voltage 97V 5、Vgs: ±20V 6、Static On-resistance: 4.8mΩ (Typ), 5.5mΩ (Max) Fei Hong Semiconductor strongly recommends using the FHP120N9F4A model high-power MOSFET to enhance the control capability of the energy storage power supply circuit. This high-power MOSFET with rated parameters of 147A and 97V truly overcomes the obstacles of product electromagnetic noise, low reliability, and declining brand reputation. The energy storage power supply circuit can use the pure domestic FHP120N9F4A model high-power MOSFET. Fei Hong Semiconductor's high-power MOSFET agency is committed to providing the most suitable component supply guarantee for electronic manufacturers in energy storage power supplies, audio amplifiers, mobile energy storage power supplies, etc. For more details, you can search "Fei Hong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077!

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