For the lithium battery protection board, an n-channel enhancement-mode MOSFET with parameters of 172A and 100V is required. Where can one select an n-channel enhancement-mode MOSFET to obtain a product suitable for the circuit diagram of the lithium battery protection board? In recent developments, n-channel enhancement-mode MOSFET products face questions about poor reliability, reduced efficiency, and poor safety benefits, all of which are closely related to the normal operation of lithium battery protection board equipment. Selecting a superior quality alternative to the n-channel enhancement-mode MOSFET is very important. When electronic designers of lithium battery protection boards substitute the STP150N10F7 model n-channel enhancement-mode MOSFET, they need to carefully evaluate multiple core indicators. First, the performance parameters of the n-channel enhancement-mode MOSFET are extremely important, such as whether the current can reach 172 amperes and whether the voltage can reach 100 volts, etc., the listed parameters are closely related to the device's working efficiency. Additionally, heat dissipation effect and voltage rise rate (dv/dt) are also key points of concern; optimal heat dissipation performance can enhance the quality of the lithium battery protection board. According to the individual needs of lithium battery protection board electronic designers, FHS170N1F4A provides a professional solution for n-channel enhancement-mode MOSFETs, with technical specifications reaching the same level as STP150N10F7. Focus on its detailed parameters: 1. N-channel field-effect transistor 2. 100% EAS test 3. Current of 172 amperes, voltage of 100 volts 4. Threshold voltage: 2.0-4.0V 5. Maximum continuous forward current: 120A 6. Highest gate-source voltage: ±20V 7. Static on-resistance RDS(ON): 3.4mΩ (Typ), 4.2mΩ (Max) Fei Hong Semiconductor recommends using the FHS170N1F4A model n-channel enhancement-mode MOSFET to increase the conversion current capability of the lithium battery protection board circuit. This n-channel enhancement-mode MOSFET with rated parameters of 172 amperes and 100 volts can indeed address issues such as poor product reliability, reduced efficiency, and poor safety benefits. Fei Hong Semiconductor's FHS170N1F4A model n-channel enhancement-mode MOSFET is the preferred choice for manufacturers of lithium battery protection boards, home appliances, photovoltaic energy storage power supplies, and other electronic products, solving various problems in circuit development. For inquiries about component supply, please contact the free trial hotline: 400-831-6077!