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Performance experience is the reason why the P-channel enhancement mode MOSFET FHA170N1F4An can replace the IPP045N10N3G.

Article Category:MOS transistor information Release time:2024-07-02 Number of page views:677 Share:
The n-channel enhancement mode MOSFET is the main capability of the DC-AC inverter, so which n-channel enhancement mode MOSFET agent can replace the IPP045N10N3G MOSFET model for use in the DC-AC inverter circuit? In the n-channel enhancement mode MOSFET market, quality problems with inferior products commonly include: reduced reliability, electromagnetic interference, poor safety benefits, etc., and these problems not only greatly hinder the normal application of DC-AC inverters but also increase maintenance costs. From this perspective, choosing a relatively high-quality n-channel enhancement mode MOSFET replacement product is extremely important. When the electronic technician of the DC-AC inverter decides to replace the IPP045N10N3G model n-channel enhancement mode MOSFET, they need to pay special attention to its performance indicators, such as whether the current can meet 172 amperes and whether the voltage can reach 100 volts, etc. These indicators affect the device's work efficiency. It is worth mentioning that the safe operating area (SOA) and short-circuit tolerance (ShortCircuit Capability) of the device are also important aspects. FHA170N1F4A, an n-channel enhancement mode MOSFET product suitable for DC-AC inverter electronic technicians with stringent requirements. It fully meets the technical requirements of IPP045N10N3G, and the detailed parameters are as follows: 1. Maximum gate-source voltage Vgs: ±20V 2. Threshold voltage VGS(th): 2.0-4.0V 3. Static on-resistance RDS(ON): 3.6mΩ (Typ), 4.4mΩ (Max) 4. SGT process 5. Has a current of 172 amperes and a voltage of 100 volts 6. N-channel enhancement mode field effect transistor The FHA170N1F4A model MOSFET operates stably in the DC-AC inverter. From this perspective, in order to enhance the control capability of the DC-AC inverter circuit, Feihong Semiconductor recommends choosing the FHA170N1F4A model n-channel enhancement mode MOSFET. The 172-ampere, 100-volt n-channel enhancement mode MOSFET effectively solves problems such as reduced product reliability, electromagnetic interference, and poor safety benefits. To break through the bottleneck of DC-AC inverter circuit development, the FHA170N1F4A model from Feihong Semiconductor, an n-channel enhancement mode MOSFET manufacturer, has become the most attractive choice for DC-AC inverter companies. One-stop component supply assurance is just a phone call away: 400-831-6077.

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