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Low-voltage MOS tube circuit performance upgrade — FHS170N8F3A and IPP037N08N3G performance substitution

Article Category:MOS transistor information Release time:2024-06-27 Number of page views:915 Share:
Which low-voltage MOSFET manufacturer can provide a product that can replace the IPP037N08N3G MOSFET for use in the circuit diagram of the lithium battery protection board? After all, low-voltage MOSFETs are the main technology in lithium battery protection boards. The low-voltage MOSFET market has widespread hidden dangers due to incomplete products, including low efficiency, short product life, and heat dissipation problems. These hidden dangers not only severely restrict the normal adoption of lithium battery protection boards but also lead to maintenance costs. Therefore, selecting a high-end level replacement product for low-voltage MOSFETs is crucial. In the low-voltage MOSFET market, the wide range of defective products covers issues such as inefficiency, short product lifespan, and heat dissipation problems. These issues not only severely hinder the normal application of lithium battery protection boards but also cause maintenance costs. Hence, choosing a high-end-level replacement product for low-voltage MOSFETs is extremely critical. When replacing the IPP037N08N3G low-voltage MOSFET, the electronic engineer of the lithium battery protection board needs to pay attention to many key characteristics. For example, the performance parameters of the low-voltage MOSFET: whether the current reaches 185A, whether the rated voltage reaches 85 volts, etc., all these are closely related to the device's operational efficiency. At the same time, thermal resistance (Rth(j-c)) and safe operating area (SOA) are also priorities. If you are an engineer designing the circuit of a lithium battery protection board who needs to focus on low-voltage MOSFET products, then FHS170N8F3A will be your best option. It seamlessly aligns with the IPP037N08N3G in technical performance. Please note the detailed parameters: 1. Threshold Voltage: 2.0-4.0V 2. Maximum Gate-Source Voltage: ±20V 3. N-channel Field Effect Transistor 4. Forward Maximum Pulse Current: 480A 5. With 185A current, 85V voltage 6. 100% RG tested Mature and stable, with excellent quality and long life low-voltage MOSFET! Fei Hong Semiconductor provides a solution for lithium battery protection board factories: the FHS170N8F3A type low-voltage MOSFET, with powerful parameters of 185A and 85V. It will effectively enhance the power switch capability of the lithium battery protection board circuit and resolve issues related to inefficiency, short product life, and heat dissipation. Breaking through the development bottleneck of the lithium battery protection board circuit, the FHS170N8F3A model from Fei Hong Semiconductor, a low-voltage MOSFET manufacturer, becomes the optimal strategy for lithium battery protection board factories. All-round component supply assurance is just a phone call away: 400-831-6077.

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