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For foreign brands with substitutes, the circuit experience of FHS120N7F6A ultra-low on-resistance MOS tube for the battery equalization board.

Article Category:MOS transistor information Release time:2024-06-16 Number of page views:794 Share:
Together with the continuous adequacy of the market system, the demand for ultra-low on-resistance MOSFETs in battery balancing boards has gradually increased. What kind of method should the person in charge of the battery balancing board adopt to select an ultra-low on-resistance MOSFET that can provide proper support for its circuit diagram? In this era, the ultra-low on-resistance MOSFET market is facing problems such as declining brand reputation, low heat dissipation capability, and reduced efficiency, which not only greatly affects the normal operation of battery balancing board equipment but also increases maintenance costs. Therefore, finding a high-standard substitute for the ultra-low on-resistance MOSFET is very important. When replacing the HYG065N07NS1P ultra-low on-resistance MOSFET, electronic engineers of the battery balancing board need to carefully choose several key aspects. The first is the performance parameters of the ultra-low on-resistance MOSFET, such as whether the current can reach 120A, whether the rated voltage can reach 70V, etc., closely related to the device's working efficiency. According to the custom requirements of the battery balancing board electronic engineers, FHS120N7F6A provides a professional solution for ultra-low on-resistance MOSFETs. Its technical specifications are comparable to those of HYG065N07NS1P. For details, please refer to its specific parameters: 1. N-channel field-effect transistor 2. Excellent quality factor FOM (RDSON*Qg) 3. Maximum pulse drain current: 480A 4. Static on-resistance: 5.4mΩ (Typ), 6.4mΩ (Max) 5. Highest gate-source voltage Vgs: ±20V 6. Threshold voltage VGS(th): 2.0-4.0V 7. Provides 120A current and 70V voltage Fei Hong Semiconductor strongly recommends using the FHS120N7F6A ultra-low on-resistance MOSFET to enhance the control capability of the battery balancing board circuit. This ultra-low on-resistance MOSFET with a rated parameter of 120A and 70V overcomes the troubles caused by product brand reputation decline, low heat dissipation capability, and efficiency reduction. To break through the bottleneck in the development of the battery balancing board circuit, the FHS120N7F6A model from Fei Hong Semiconductor, the ultra-low on-resistance MOSFET manufacturer, becomes a wise choice for battery balancing board enterprises. Comprehensive management of component supply assurance is just a phone call away: 400-831-6077.

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