With the advancement of technology, the demand for high-power devices in various industrial and commercial sectors is gradually increasing. The focus is on industries such as non-isolated DC-DC converters and inverters, where there is an urgent need for devices like low Rds(on) MOSFETs that can achieve precise current control and regulation. In the design of non-isolated DC-DC converter circuits, it has become essential to replace the STP170N8F7 model with a strong domestic low Rds(on) MOSFET. The market for low Rds(on) MOSFETs currently faces multiple challenges. Poor-quality products exist with issues such as safety hazards, poor heat dissipation, and weak reliability. These not only seriously interfere with the normal operation of non-isolated DC-DC converters but also increase maintenance costs. Therefore, it is necessary to select high-quality low Rds(on) MOSFET replacement models. When electronic technicians for non-isolated DC-DC converters are replacing the STP170N8F7 model low Rds(on) MOSFET, they need to pay special attention to several key points. First, the performance parameters of the low Rds(on) MOSFET are very urgent, such as whether the rated current can reach 185A and whether the voltage can reach 85V. These parameters relate to the efficiency of the device. It is particularly important to note that the dv/dt (rate of voltage rise) and Trench-FS technology cannot be ignored. A strong dv/dt performance can enhance the quality of the non-isolated DC-DC converter. FHP170N8F3A has successfully replaced the STP170N8F7 and is widely used in many foreign non-isolated DC-DC converter enterprises. Here are its detailed technical specifications: 1. Threshold voltage VGS(th): 2.0-4.0V 2. Current rating: 185A, Voltage rating: 85V 3. Maximum gate-source voltage Vgs: ±20V 4. Reverse transfer capacitance: 97pF 5. N-channel enhancement-mode field-effect transistor 6. Wide BV voltage range 7. RDS(ON): 2.95mΩ (Typ), 4mΩ (Max) To improve the conversion current performance of the non-isolated DC-DC converter circuit, Feihong Semiconductor strongly recommends using the low Rds(on) MOSFET model FHP170N8F3A. This 185A, 85V low Rds(on) MOSFET can practically solve problems such as product safety hazards, poor heat dissipation, and weak reliability. Feihong Semiconductor's measures for low Rds(on) MOSFETs for non-isolated DC-DC converter enterprises bring peace of mind and their service is attentive and thorough. They will continue to procure the FHP170N8F3A low Rds(on) MOSFET. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!