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Master the selection skills of n-channel enhancement SGTMOSFET: why can FHD60N1F10A with 60A current handle the BMS protection board circuit?

Article Category:MOS transistor information Release time:2024-06-08 Number of page views:646 Share:
What aspects can BMS protection boards outperform in operating conditions during the continuous evolution of the distribution market? The core focus is on how to select a domestic replacement model for the SVG10120NAT type SGTMOSFET to be used in the BMS protection board circuit. The n-channel enhancement mode SGTMOSFET market currently faces multiple pressures, with the presence of unqualified applications causing problems such as poor safety benefits, poor heat dissipation effects, electromagnetic interference impacts, etc., which not only seriously disrupt the normal operation of the BMS protection board but also lead to maintenance costs. Therefore, selecting a good n-channel enhancement mode SGTMOSFET replacement model parameters is very important. When BMS protection board electronic engineers replace the SVG10120NAT type n-channel enhancement mode SGTMOSFET, they need to carefully select several key details. The first is the performance parameters of the n-channel enhancement mode SGTMOSFET, such as whether the rated current can reach 60A and whether the rated voltage can reach 100V. These parameters mainly affect the device's working efficiency. Previously, global BMS protection board manufacturers have generally chosen FHD60N1F10A as an effective replacement for SVG10120NAT, which can be widely applied. It is strongly recommended that everyone understand its detailed technical parameters: 1. Maximum pulse drain current: 240A 2. Vgs: ±20V 3. Current of 60A, voltage of 100V 4. VGS (th): 2.0-4.0V 5. Field N-channel enhancement mode 6. Wide BV voltage range N-channel enhancement mode SGTMOSFET ensures stable control and excellent quality in the BMS protection board! Therefore, to increase the conversion current capability of the BMS protection board circuit, Feihong Semiconductor strongly recommends selecting the FHD60N1F10A model n-channel enhancement mode SGTMOSFET. The 60A, 100V n-channel enhancement mode SGTMOSFET effectively solves problems such as poor product safety benefits, poor heat dissipation effects, and electromagnetic interference impacts. To solve circuit development problems for electronics manufacturers, Feihong Semiconductor's FHD60N1F10A model n-channel enhancement mode SGTMOSFET is reliable. Applications such as home appliances and DC/DC power converters are guaranteed. Please consult 400-831-6077 for free sample services!

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