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Fast improvement of the performance of the lithium polymer battery circuit, FHS110N8F5B MOSFET becomes the preferred choice for R & D

Article Category:MOS transistor information Release time:2024-06-05 Number of page views:488 Share:
How can lithium polymer batteries prevail over competitors in the operational practice scenarios during their continuous refinement in the currency market? The core module is how to select a domestic alternative model of MOSFET for IPP052N08N5 used in the circuit diagram of lithium polymer batteries. The MOSFET market is currently in a difficult situation, with unreliable performance: brand reputation decline, low heat dissipation capacity, electromagnetic interference, etc., which not only seriously affect the normal operation of lithium polymer batteries but also increase maintenance costs. From this perspective, the key lies in choosing high-quality MOSFET domestic alternatives. For electronic designers of lithium polymer batteries, when selecting a domestic alternative of IPP052N08N5 MOSFET, they should focus on multiple key attributes. First is the performance parameters of the MOSFET, such as whether the current reaches 147A and the voltage reaches 85V, etc. The aforementioned parameters are closely related to the efficiency of the device. In the past, many national lithium polymer battery manufacturers have used FHS110N8F5B as an alternative to IPP052N08N5, and it has been widely used. It is recommended that everyone understand its performance parameters: 1. Current: 147A, Voltage: 85V 2. Maximum forward pulse current: 480A 3. Static on-resistance RDS(ON): 4.4mΩ (Typ), 5.5mΩ (Max) 4. Threshold voltage: 2.0-4.0V 5. Maximum gate-source voltage: ±20V 6. N-channel enhancement type The performance improvement of lithium polymer battery circuits comes from the power switch capability. Fei Hong Semiconductor's FHS110N8F5B MOSFET, with its powerful parameters of 147A and 85V, ensures the resolution of product brand reputation decline, low heat dissipation capacity, and electromagnetic interference problems. Fei Hong Semiconductor's FHS110N8F5B MOSFET model solves circuit development problems for electronic manufacturers. It guarantees applications such as LED lighting and brushless DC motor drivers. Please call 400-831-6077 for free sample services!

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