Which low-voltage SGTMOSFET agent can be considered as the national replacement for the SVG095R0NT model SGTMOSFET to be used in portable energy storage power supply circuits? Nowadays, the common challenges in the low-voltage SGTMOSFET market involve poor reliability, electromagnetic interference, and low efficiency. The quality of low-voltage SGTMOSFETs is closely related to the normal performance of portable energy storage power supplies, and the reliability of the supply source is also closely related to the market share. Under this scenario, finding high-quality national replacement models of low-voltage SGTMOSFET products becomes necessary. When portable energy storage power supply electronic designers are replacing the SVG095R0NT model low-voltage SGTMOSFETs, they need to carefully distinguish several key factors. First is the performance parameters of the low-voltage SGTMOSFET, such as whether the current can reach 147 amperes and whether the rated voltage can reach 97 volts, which are closely related to the device's working efficiency. The product circuit of the portable energy storage power supply manufacturer previously used the SVG095R0NT model SGTMOSFET. Now, a domestic low-voltage SGTMOSFET agent needs to be found to supply the FHS120N9F4A model low-voltage SGTMOSFET for the national replacement of the SVG095R0NT model SGTMOSFET in the portable energy storage power supply. 1. Reverse transfer capacitance: 23pF 2. Static on-resistance RDS(ON): 4.8mΩ (Typ), 5.5mΩ (Max) 3. N-channel field-effect transistor 4. Maximum gate-source voltage Vgs: ±20V 5. 100%Rg test 6. VGS(th): 2.3-3.8V 7. Withstands 147 amperes current and 97 volts voltage Thanks to the introduction from industry predecessors, it is known that Feihong Semiconductor is a legitimate low-voltage SGTMOSFET agent in Shuangyashan, Heilongjiang Province, so the FHS120N9F4A model low-voltage SGTMOSFET was selected for use in portable energy storage power supplies. Feihong Semiconductor is willing to share the selection of the FHS120N9F4A model low-voltage SGTMOSFET to enhance the power switching capability of the portable energy storage power supply circuit. This 147-ampere, 97-volt low-voltage SGTMOSFET complies with solving practical problems such as poor product reliability, electromagnetic interference, and low efficiency. The FHS120N9F4A model low-voltage SGTMOSFET supplied by Feihong Semiconductor is the preferred choice for electronic product manufacturers such as portable energy storage power supplies, lithium battery protection, and DC converters, solving various problems in circuit development. For details about component supply, please contact the free sample hotline: 400-831-6077!