Welcome to Feihong Semiconductor official website, pure domestic IGBT e-mail: feihongbcok@gmail.com

Cost-effectiveness analysis of easy-to-use SVG095R0NT and FHD110N8F5B high-power MOS transistor for FHD

Article Category:MOS transistor information Release time:2024-05-23 Number of page views:682 Share:
Which large-power MOSFET manufacturer enjoys the ability to replace the SVG095R0NT MOSFET model for use in the battery management system circuit? After all, the large-power MOSFET is the core concern of the battery management system. The current trend in the large-power MOSFET market faces multiple pressures and bad existing applications: low efficiency, reduced reliability, poor heat dissipation, electromagnetic interference, etc., which not only seriously affect the normal operation of the battery management system but also lead to maintenance costs. Based on this, selecting high-quality large-power MOSFETs to replace key models and parameters is crucial. In the electronic engineering of the battery management system, engineers need to focus on the performance indicators of the selected SVG095R0NT model large-power MOSFET. For example, whether the rated current can meet 147A, and whether the rated voltage can reach 85V, etc., these indicators are closely related to the device's working efficiency. The FHD110N8F5B has successfully replaced the SVG095R0NT and can be widely applied in many national battery management system production factories. It is strongly recommended to understand its detailed technical parameters: 1. Current of 147A, voltage of 85V 2. N-channel enhancement-mode field-effect transistor 3. Achieves extremely low RDSON on-resistance 4. Maximum forward pulse current: 480A 5. Highest gate-source voltage: ±20V 6. VGS(th): 2.0-4.0V The FHD110N8F5B model MOSFET is stable and reliable in controlling the battery management system. The starting point for enhancing the performance of the battery management system circuit is the power switch capability. The FHD110N8F5B type large-power MOSFET from Feihong Semiconductor, with its powerful parameters of 147A and 85V, ensures solving issues such as low efficiency, reduced reliability, poor heat dissipation, and unknown electromagnetic interference. Selecting the FHD110N8F5B model large-power MOSFET from Feihong Semiconductor provides assistance to battery management system production factories in resolving circuit development problems and ensuring a stable supply of components. Consultation hotline: 400-831-6077, free samples waiting for you!

*All relevant knowledge of this site is for your reference and learning purposes only. Part of it comes from the Internet, and its copyright belongs to the original author and

Fill in products and get free samples of products

*Your salutation

*Contact Information

*Product Type

*Sample type

Prompt

Submitted successfully

A specialist will contact you later, please pay attention to it.~

Return to Cart View more products

popular product

Feihong Semiconductor has provided one-stop MOS tube solutions for enterprises in the field of 10000 electronics. | e-mail : feihongbcok@gmail.com
Feihong Semiconductor has provided one-stop MOS tube solutions for enterprises in the field of 10000 electronics. 关闭

put it away

Click to apply
Free sample