The key feature of the inverter power supply is the high-power MOSFET, so which manufacturer of high-power MOSFET can replace the STP170N8F7 MOSFET for use in the inverter circuit? In the high-power MOSFET market, common defects of products with poor performance include electromagnetic noise, shortening product life, and low efficiency, which not only hinder the normal use of the inverter power supply but also increase maintenance costs. Based on these analyses, it is very important to adopt high-quality high-power MOSFETs as substitutes. When using the STP170N8F7 high-power MOSFET, the inverter power supply technician really needs to pay attention to its performance parameters, such as whether the rated current reaches 185A, whether the rated voltage reaches 85V, etc. The related indicators are directly related to the working efficiency of the inverter circuit. Moreover, the tail current and thermal resistance (Rth(j-c)) are also critical factors. According to the requirements of the inverter power supply technician, we recommend a high-power MOSFET product: FHP170N8F3A. It is technically suitable for STP170N8F7. For detailed information, please refer to the parameters: 1. 185A current, 85V voltage 2. Maximum forward pulse current: 480A 3. Static on-resistance RDS(ON): 2.95mΩ (Typ), 4mΩ (Max) 4. Threshold voltage VGS(th): 2.0-4.0V 5. Maximum gate-source voltage Vgs: ±20V 6. N-channel enhancement type To enhance the control performance of the inverter circuit, Feihong Semiconductor recommends adopting the powerful FHP170N8F3A type high-power MOSFET, whose parameters of 185A and 85V effectively solve problems such as electromagnetic noise, shortened product life, and low efficiency. To help electronic manufacturers solve circuit development issues, the FHP170N8F3A model high-power MOSFET from Feihong Semiconductor is reliable. Applications in automotive electronics and switching power supplies are guaranteed. Please call 400-831-6077 for free sample services!