The continuous advancement of technology has promoted the increasingly widespread application of high-voltage and high-current switching devices in various professional fields, particularly in areas such as photovoltaic energy storage power supplies and power management systems for industrial control equipment. In these fields, there is an urgent need for medium and low-voltage field-effect transistors capable of precise current control and regulation. In photovoltaic energy storage power supply circuits, selecting a domestically advanced medium and low-voltage field-effect transistor device to replace the SVG095R0NT model is highly significant. At present, in the medium and low-voltage field-effect transistor market, the common defects of unstable performance medium and low-voltage field-effect transistors include electromagnetic noise and shortened product life. These issues not only seriously disrupt the normal operation of photovoltaic energy storage power supply equipment but also increase maintenance costs. From this perspective, finding high-quality domestic alternative medium and low-voltage field-effect transistor products is extremely important. When operating the SVG095R0NT medium and low-voltage field-effect transistor in photovoltaic energy storage power supply electronics, technicians must pay close attention to its performance parameters, such as whether the rated current can reach 147 amperes and whether the rated voltage can reach 97 volts. These parameters are closely related to the operational efficiency of the photovoltaic energy storage power supply circuit. It is essential that the thermal resistance (Rth(j-c)) and temperature coefficient of the device are prioritized. In many foreign photovoltaic energy storage power supply factories, the FHS120N9F4A has previously replaced the SVG095R0NT and has been widely applied. It is recommended that you carefully review its detailed product specifications: 1. Threshold voltage VGS(th): 2.3-3.8V 2. Vgs: ±20V 3. RDS(ON): 4.8mΩ (Typ), 5.5mΩ (Max) 4. N-channel enhancement mode field effect transistor 5. 100% avalanche tested 6. Current capacity of 147 amperes and voltage capacity of 97 volts 7. Maximum pulse drain current: 480A As informed by those in the know, since Feihong Semiconductor is the authentic medium and low-voltage field-effect transistor distributor in Liaoning Province, the FHS120N9F4A medium and low-voltage field-effect transistor is chosen for use in photovoltaic energy storage power supplies. Improving the performance of photovoltaic energy storage power supply circuits ultimately depends on the power switch capability. The FHS120N9F4A medium and low-voltage field-effect transistor from Feihong Semiconductor ensures solutions to problems like electromagnetic noise and shortened product life with its powerful parameters of 147 amperes and 97 volts. The FHS120N9F4A medium and low-voltage field-effect transistor sold by Feihong Semiconductor is the preferred choice for electronic product manufacturers such as photovoltaic energy storage power supplies, LED lighting, and inverters, solving various problems in circuit development. For inquiries about component supply, please contact the free sample hotline: 400-831-6077!