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The good partner of boost converter circuit design, parameter interpretation of FHP200N4F3A n-channel enhancement mode field effect transistor

Article Category:MOS transistor information Release time:2024-05-14 Number of page views:634 Share:
With the continuous upgrading of technology, power electronic switch devices have gradually become an indispensable part of various emerging industries. The demand for n-channel enhancement mode field effect transistors, which can flexibly control and regulate current, continues to rise in fields such as boost converters and industrial automation control systems. When designing a boost converter circuit, it is very important to select an advanced domestic n-channel enhancement mode field effect transistor device to replace the IPP041N04NG model. Issues with the quality of n-channel enhancement mode field effect transistors, such as poor heat dissipation effect and short product life, often affect the normal startup of the boost converter. Therefore, searching for high-standard domestic replacement models of n-channel enhancement mode field effect transistors is very important. For electronic technicians working on boost converters, when replacing the domestic model IPP041N04NG n-channel enhancement mode field effect transistor, they need to carefully evaluate several key points. First is the performance parameters of the n-channel enhancement mode field effect transistor, such as whether the current can reach 200A, whether the rated voltage can reach 40V, etc., the listed parameters are related to the efficiency of the device. According to technicians in the boost converter field, choosing the FHP200N4F3A n-channel enhancement mode field effect transistor product is a quick solution that precisely matches the technical parameters of IPP041N04NG, allowing you to pay close attention to the detailed parameters: 1. Static on-resistance RDS(ON): 2.4mΩ (Typ), 3.1mΩ (Max) 2. Has a current of 200A and a voltage of 40V 3. Maximum gate-source voltage: ±20V 4. 100% passed RG testing 5. N-channel field effect transistor 6. Threshold voltage: 2.0-4.0V In order to improve the control capability of the boost converter circuit, Flyhong Semiconductor recommends choosing the FHP200N4F3A model n-channel enhancement mode field effect transistor. The 200A, 40V n-channel enhancement mode field effect transistor really solves problems such as poor heat dissipation effect and short product life. Flyhong Semiconductor's service demonstrates professional spirit, allowing boost converter manufacturers to comfortably entrust the customization of the FHP200N4F3A model n-channel enhancement mode field effect transistor. For more details, you can search "Flyhong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!

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