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How to select low-voltage MOS tubes with TO-263 packaging for the battery management system? Check out the parameters of the pure domestic FHS250N1F2A!

Article Category:MOS transistor information Release time:2024-05-04 Number of page views:634 Share:
The continuous optimization and upgrading of technology drive the sustained accumulation of demand for power electronic devices in various professional industries. Especially in battery management systems and solar inverters, the need for devices like low-voltage MOSFETs that can precisely control and regulate current is becoming increasingly urgent. In the circuit design of battery management systems, it is extremely important to select a competitive domestic low-voltage MOSFET device to replace the Infineon IPP030N10N3G model. Currently, the low-voltage MOSFET market faces multiple challenges, including issues such as susceptibility to damage, declining brand reputation, low efficiency, and poor heat dissipation. These not only severely disrupt the normal operation of battery management systems but also lead to increased maintenance costs. Therefore, selecting high-quality low-voltage MOSFET replacement models is very important. When replacing the low-voltage MOSFET model of Infineon IPP030N10N3G, battery management system engineers need to focus on many core factors. For example, the performance parameters of the low-voltage MOSFET: whether the rated current can reach 250A and the voltage whether it can reach 100V, all these directly affect the device's work efficiency. Moreover, parallel current balancing and gate threshold voltage (VGE(th)) are also key components. According to the needs of battery management system engineers, we are pleased to recommend a low-voltage MOSFET product: FHS250N1F2A. It meets the technical parameters of Infineon IPP030N10N3G. All relevant parameters can be found below: 1. Maximum pulse drain current: 1000A 2. Highest gate-source voltage: ±20V 3. Current of 250A, voltage of 100V 4. Threshold voltage: 2.0-4.0V 5. N-channel enhancement-mode field-effect transistor 6. Low gate charge 7. Static on-resistance RDS(ON): 2.5mΩ (Typ), 3.0mΩ (Max) To enhance the conversion current performance of the battery management system circuit, Flyhong Semiconductor recommends selecting the reliable FHS250N1F2A type low-voltage MOSFET. Its parameters of 250A and 100V effectively solve problems such as brand reputation decline, low efficiency, and poor heat dissipation. Battery management system factories choosing Flyhong Semiconductor as the low-voltage MOSFET agent will provide solid component supply guarantees for LED lighting, AC-DC switch power supplies, and other electronics factories. For more details, you can search "Flyhong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!

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