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Build excellent DC/DC power converters, FHN60N1F10LA FETs help circuit design innovation

Article Category:MOS transistor information Release time:2024-05-03 Number of page views:1255 Share:
The rapid optimization of technology has clearly increased the need for high-power components in various technical industries. The key lies in areas such as DC/DC power converters and voltage regulation in portable electronic devices, where there is an urgent need for devices like field-effect transistors to achieve precise control and regulation of current. In the design of DC/DC power converter circuits, selecting a pure domestic field-effect transistor device to replace the VSP014N10MS model is extremely critical. The existing situation in the field-effect transistor market often suffers from drawbacks such as short product life, electromagnetic interference, and poor heat dissipation. These issues not only seriously interfere with the normal operation of DC/DC power converters but also increase maintenance costs. From this perspective, choosing a higher quality replacement for field-effect transistors is crucial. In DC/DC power converter electronics engineering, the selection of the VSP014N10MS type field-effect transistor requires designers to focus on its performance indicators. For example, whether the current meets 60A and whether the rated voltage reaches 100V. These indicators directly relate to the efficiency of the device. In relevant case discussions, the FHN60N1F10LA is successfully replacing the VSP014N10MS in many DC/DC power converter manufacturers abroad and is widely used. We recommend everyone to know its detailed parameters: 1. 100% UIS test passed 2. Avalanche current: 15A 3. Vgs: ±20V 4. 60A current, 100V voltage 5. N-channel enhancement mode field-effect transistor 6. Static on-resistance RDS(ON) (VGS=4.5V): 12.5mΩ (Typ), 15.5mΩ (Max) 7. VGS(th): 1.2-2.4V The improvement in the performance of DC/DC power converter circuits can be attributed to the control capability. Fei Hong Semiconductor's FHN60N1F10LA type field-effect transistor ensures the resolution of problems such as short product life, electromagnetic interference, and poor heat dissipation with its powerful parameters of 60A and 100V. Fei Hong Semiconductor's strategy for field-effect transistors for DC/DC power converter manufacturers provides peace of mind, and their service attitude is diligent. They will continue to purchase the FHN60N1F10LA type field-effect transistor in the long term. For more details, you can search "Fei Hong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077!

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