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recommend 170 N1F4A field effect tube in BLDC motor drive in the replacement of HYG045N10NS1P model parameters to use!

Article Category:Featured Articles Release time:2024-03-01 Number of page views:991 Share:

According to data analysis, the market size of BLDC in 2022 was $18.9 billion and it is expected that the market size will reach $22.3 billion in 2025. The application in electric bicycles and home appliances is constantly increasing, so the market share of BLDC motor drives will definitely continue to rise.


There are many domestic and international products such as HYG045N10NS1P, MDP1991, SVG104R0NT, HYG042N10NS1P, IPP045N10N3G, STP150N10F7 that can be applied to the circuit of BLDC motor drive. To increase the market share in the BLDC motor drive market, it is necessary to do well in both front-end and back-end research and development.


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In addition to good circuit design, choosing good power devices is also required for research and development. Today we will learn about a model 170N1F4A field-effect transistor, which is a pure domestic MOS tube semiconductor component that can replace the above models and parameters for use in BLDC motor drives.


Currently, the model 170N1F4A field-effect transistor is effective for use in BLDC motor drives in the domestic market, and this has been recognized by many motor manufacturers. In addition to the basic parameters of 172A and 100V, it also has excellent product features:


1. Low gate charge

2. 100% tested with Rg

3. 100% tested with avalanche test

4. Low Crss (typical value 33 pF)

5. Fast switching speed

6. 100% tested with thermal resistance

7. RoHS product

8. SGT process


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Of course, in addition to the excellent characteristics of the product, the model 170N1F4A can replace the MOS tube models HYG045N10NS1P, MDP1991, SVG104R0NT, HYG042N10NS1P, IPP045N10N3G, STP150N10F7 and also has excellent parameters:


1. Vgs (±V): 20; VGS (th): 2.0-4.0V;

2. ID (A): 172A; BVdss (V): 100V

3. Maximum pulse drain current (IDM): 480A

4. N-channel enhancement-mode field-effect transistor

5. TO-220 packaged products can be used for BLDC motor drive

6. Reverse transfer capacitance: 33pF

7. Static on-resistance RDS(on) = 4.4mΩ(MAX) @VGS = 10 V, RDS(on) = 3.6mΩ(TYP) @VGS = 10 V


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For manufacturers who want to upgrade the quality of BLDC motor drives, it is recommended to choose the model 170N1F4A field-effect transistor.


To capture hundreds of billions of dollars in the market, Hongfei Semiconductor's one-stop service for power devices always starts from the needs of electronic manufacturers. Its good manufacturing process and parameter performance provide better compatibility for BLDC motor drives and ensure product reliability.


The rapid iteration of the domestic market requires improving product quality by selecting the right model. Hongfei Semiconductor's MOS tubes have been widely used in motor circuits, smart home appliances, new energy electronics fields: such as automotive electronics, electric vehicles, intelligent audio equipment, household appliances, LED lighting, chargers, computer motors, etc., providing high-quality products and supporting services for domestic electronic product manufacturers. In addition to free trials, they can also customize MOS tube products according to customer needs. You can find us by searching "Hongfei Semiconductor" on Baidu, and the free trial hotline is 400-831-6077.


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