In order to improve the efficiency of DC-DC converters, low-voltage and high-current MOSFETs are required for optimization replacement. After all, synchronous rectification technology uses power MOSFETs with extremely low on-resistance to replace rectifier diodes, thereby significantly reducing the loss in the rectifier and improving product efficiency.

Manufacturers of new energy vehicle onboard power supplies that have both DC-DC converters and onboard chargers are entering the Asia-Pacific region, Europe, North America, South America and other new energy vehicle markets.

How can they use a field effect transistor that can replace the SVG095R0NT model parameters to improve the efficiency of the DC-DC converter and thus enhance product quality?

The key lies in the process and parameters of the field effect transistor. For manufacturers producing DC-DC converters, when choosing foreign SVG095R0NT low-voltage MOSFET models for replacement, they consider the product and cost-effectiveness.

In recent years, more and more new energy vehicle upstream and downstream product export enterprises are using the domestic 120N9F4A model field effect transistor. After all, establishing a stable and cost-effective semiconductor supply chain is one of the core competitiveness of domestic electronic manufacturers.

Why is the 120N9F4A model field effect transistor recognized for use in DC-DC converters? In addition to its 147A and 94V parameter MOSFET, it also has excellent product features:

1. Wide BV voltage range

2. Fast switching capability

3. Excellent short-circuit resistance performance

4. Low gate charge, low Crss (typical value pF)

5. 100% Rg tested

6. 100% avalanche tested

7. 100% thermal resistance tested

8. RoHS compliant product

Of course, apart from the excellent features of the product, the 120N9F4A can replace the SVG095R0NT low-voltage MOSFET model due to its excellent parameters:

1. N-channel enhancement-mode field effect transistor

2. TO-220, TO-263 packaging forms are diverse, with a wider application range

3. Vgs (±V): 20; VGS (th): 2.2-3.8V;

4. ID (A): 147A; BVdss (V): 94V

5. Maximum pulse drain current (IDM): 480A

6. Reverse transfer capacitance: 23pF

7. Static on-resistance RDS(on) = 5.4mΩ(MAX) @VGS = 10 V, RDS(on) = 4.8mΩ(TYP) @VGS = 10 V

Of course, only some of the product parameters are listed above. For more detailed information about the 120N9F4A model parameters, please refer to the product specification sheet. The 120N9F4A MOSFET is produced by a domestic MOSFET manufacturer that has been dedicated to research and development for 20 years. Its excellent manufacturing process and parameter performance make it better suited for DC-DC converters, ensuring product reliability.

Because it uses SGT technology to achieve extremely low RDSON on-resistance, and production standards are very strict, it is widely used in applications such as DC-DC converters, synchronous rectification, motor drives, inverters, battery management systems, 24V-72V input electric vehicle controllers, etc.; MOSFET brand replacement model: SVG095R0NT.

The use of 94V, 147A MOSFETs for replacement, selecting the right model is important. Feihong Semiconductor's MOSFETs are widely used in power circuits, smart home appliances, new energy electronics fields: such as automotive electronics, electric vehicles, smart audio equipment, household appliances, LED lighting, chargers, computer power supplies, and other industries, providing high-quality products and supporting services for domestic electronic manufacturers. In addition to providing free samples, we can also customize MOSFET products according to customer needs. You can find us by searching "Feihong Semiconductor" on Baidu, and the free sample hotline is 400-831-6077.