The main task of the high-power IGBT is power factor correction, which can directly affect its stability. Through what channels can the selection of high-power IGBTs be obtained to suit the circuit diagram for power factor correction?

On May 30, 2023, Feihong Semiconductor's high-power IGBT company received an inquiry from Mao Sheng in Dali, Yunnan.

According to the description, Mr. Mao, the designer, was looking for a domestic high-power IGBT to replace the FGH75N65SHDT model IGBT. He intended to find a 75A, 650V, high-quality high-power IGBT.

Subsequently, he consulted Feihong Semiconductor's high-power IGBT company about providing a domestic high-power IGBT solution suitable for power factor correction and capable of replacing the FGH75N65SHDT model IGBT.

After understanding the situation, Feihong Semiconductor immediately sent a team to focus on Mao Sheng's power factor correction circuit diagram requirements.

They planned a suitable and appropriate domestic high-power IGBT for power factor correction. Considering the actual environment in Dali, Yunnan, it was recommended to use the FHA75T65A to replace the FGH75N65SHDT model IGBT in the power factor correction circuit diagram.

Why is the FHA75T65A model IGBT?

Because the FHA75T65A model IGBT not only has the Trench Field Stop II technology characteristics but also has advantages such as positive temperature coefficient and low gate charge.

In addition, the FHA75T65A model has current and voltage parameters of 75A and 650V, respectively. These characteristics of high-power IGBTs are very suitable for use in power factor correction.

Importantly, the customer highly recognizes the FHA75T65A model high-power IGBT, making it the most distinctive product among all high-power IGBTs!

Of course, as a power factor correction circuit designer, you need to understand the detailed parameters of this domestic FHA75T65A high-power IGBT:

The FHA75T65A is a field N-channel trench-gate cutoff type with 75A, 650V, VCEsat typical value: 1.75V-typ, <2.0V, ID (Tc=100℃): 75A; BVCES: 650V; IF (A) (Tc=25℃): 150A; IF (A) (Tc=100℃): 75A.

Finally, Dali, Yunnan's Feihong Semiconductor successfully addressed Mao Sheng's high-power IGBT supply objective.

After sampling, Mr. Mao explained the reasons for choosing Feihong Semiconductor:

He wanted to improve the conversion current capability of power factor correction, and Feihong Semiconductor solved his needs, so he chose the FHA75T65A model IGBT.

Feihong Semiconductor provides original manufacturer direct sales services for high-power IGBTs, solving the high-power IGBT required for power factor correction. Moreover, the quotations for domestic high-power IGBTs are reasonable.

Mr. Mao said that Feihong Semiconductor's strategy for high-power IGBTs made him feel at ease and comfortable, and their service style is straightforward. He will continue to purchase the FHA75T65A model high-power IGBT in the long term.

The domestic FHA75T65A model is commonly used for power factor correction. Feihong Semiconductor High Power IGBT Company spares no effort to provide reliable component supply guarantees for electronic manufacturers such as non-sinusoidal output inverters and double-conversion UPSs. For more details, you can search "Feihong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077!