Is there any high voltage IGBT discrete factory that can replace the NCE20TD60BF IGBT model for use in the VCD inverter circuit diagram?

On June 12, 2023, the high voltage IGBT discrete factory of Feihong Semiconductor received a consultation from Mr. Wei Sheng of Gansu Province.

According to the description: Mr. Wei hopes to find a domestic high voltage IGBT discrete factory to supply the FHF20T60A high voltage IGBT discrete for the VCD inverter to achieve IGBT replacement usage.

Subsequently, Mr. Wei consulted the high voltage IGBT discrete factory of Feihong Semiconductor, hoping it could provide a domestic high voltage IGBT discrete solution suitable for the VCD inverter and capable of replacing the NCE20TD60BF IGBT.

After understanding the situation, the Feihong Semiconductor high voltage IGBT discrete factory immediately dispatched a team based on Mr. Wei's VCD inverter circuit diagram requirements.

They planned an appropriate and suitable domestic high voltage IGBT discrete for the VCD inverter. Considering Mr. Wei's actual environment, the VCD inverter circuit diagram suggested using the FHF20T60A to replace the NCE20TD60BF IGBT.

Why is the FHF20T60A IGBT model chosen?

Because the FHF20T60A IGBT model not only has low switching loss characteristics but also features reverse parallel fast recovery diode and RoHS products.

More importantly, the FHF20T60A model has current and voltage parameter characteristics of 20A and 650V. These characteristics of high voltage IGBT discretes are very suitable for use in VCD inverters.

Importantly, the customer has extremely high recognition of the FHF20T60A high voltage IGBT discrete, winning the highly evaluated all-star product of high voltage IGBT discretes!

Of course, as a VCD inverter circuit diagram engineer, you must understand the detailed parameters of this FHF20T60A domestic high voltage IGBT discrete:

The FHF20T60A is a trench gate field-stop type IGBT with 20A and 650V, typical VCEsat value: 1.49V, <1.7V, ID (Tc=100℃): 20A; BVCES: 650V; IF(A)(Tc=25℃): 20A; IF(A)(Tc=100℃): 10A.

Finally, the high voltage IGBT discrete factory of Gansu Province Feihong Semiconductor successfully executed Mr. Wei's high voltage IGBT discrete supply mission.

After the trial sample, Mr. Wei explained the reason for choosing Feihong Semiconductor:

He hoped to find the FHF20T60A high voltage IGBT discrete in Gansu Province to enhance the performance of the VCD inverter. The responsible person of the Gansu Province VCD inverter manufacturer, Mr. Wei, chose Feihong Semiconductor due to its excellent service.

Feihong Semiconductor provides high voltage IGBT discrete manufacturer direct sales services, solving the high voltage IGBT discrete required by the VCD inverter, and the price of domestic high voltage IGBT discretes is reasonable.

Mr. Wei said that Feihong Semiconductor's service style is patient and professional, making people feel secure and pleasant when customizing the FHF20T60A high voltage IGBT discrete.

The domestic FHF20T60A model can be commonly used in VCD inverters. Feihong Semiconductor's high voltage IGBT discrete factory strives to provide great component supply guarantees for electronic manufacturers such as fixed-frequency hard-switching inverters and portable emergency energy storage power supplies. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial sample hotline: 400-831-6077!