From the use of electronic devices to intelligent electronics, the increase in equipment is undoubtedly an enhancement to the convenience of people's lives. However, improving the efficiency of energy usage to enhance product quality and reduce energy consumption has always been the goal pursued by electronic engineers. For example, the technology of synchronous rectification can improve product efficiency and thus reduce power consumption.

In the actual development and production of synchronous rectification circuits, it is worth noting that as the core electronic component, MOSFETs must be chosen carefully to further stand out.

In the market, IPT015N10N5, which was commonly used before as a foreign model, already has a good domestic alternative in China, which is the FHL385N1F1A field effect transistor from Feihong Semiconductor.

Why? Because the FHL385N1F1A field effect transistor has the following features:

1. Low on-resistance: enables the product to support smaller impedance and larger peak current.

2. 100% EAS testing, providing data reference for product reliability

3. 100% DVDS thermal resistance testing (lower thermal resistance, excellent temperature rise performance)

4. 100% Rg testing, verifying product stability

5. Industrial-grade reliability performance: small package inductance, excellent EMI characteristics and reliability.

Field effect transistors need to be safe, stable, and reliable, not only in terms of performance but also in terms of supply. This industrial-grade FHL385N1F1A field effect transistor with parameters of 385A current, 100V voltage is very suitable for use in synchronous rectification circuits.

Electronic research and development engineers who have used this MOSFET from Feihong know the detailed parameters of this high-quality FHL385N1F1A domestic field effect transistor: it has a current and voltage of 385A and 100V respectively, RDS(on) = 1.5mΩ(MAX) @VGS = 10 V, RDS(on) = 1.3mΩ(TYP) @VGS = 10 V, maximum gate-source voltage @VGS = ±20 V.

FHL385N1F1A is an N-channel enhancement mode field effect transistor. The FHL series adopts the TOLL-8L package form, with low thermal resistance, low parasitic inductance, low internal package resistance, and small size characteristics.

The specific parameters of FHL385N1F1A are: Vgs(±V): 20; VGS(th): 2.0-4.0V; ID(A): 385A; BVdss(V): 100V.

Reverse transfer capacitance: 940pF, static on-resistance (typ): 1.3mΩ, maximum pulse drain current (IDM): 1540(A).

The more intelligent the era, the more cost-effective field effect transistors are needed. In the selection of domestic MOSFET replacement products, the high-quality FHL385N1F1A field effect transistor can be used to replace the IPT015N10N5 parameter model for synchronous rectification circuits.

For the replacement of 100V, 385A MOSFETs, choosing the right model is crucial. Feihong Semiconductor's MOSFETs are not only widely used in synchronous rectification circuits but also applicable to new energy electric vehicles, audio amplifiers, UPS, and other terminal applications. They provide high-quality products and services to domestic electronic manufacturers. In addition to offering free samples, they can also customize MOSFET products according to customer needs. Simply search for "Feihong Semiconductor" on Baidu to find us, and our free sample hotline is 400-831-6077.