Can you find some companies that produce high-power IGBTs and have the ability to replace the FGH75N65SHDT IGBT model from Fairchild with the FHA75T65A model for use in a high-power portable energy storage power supply circuit?

On May 7, 2023, Feihong Semiconductor's high-power IGBT company received an inquiry from Mr. Shi, who is from Shijiazhuang.

According to the description, Engineer Shi hopes to find domestic high-power IGBT suppliers that can provide the FHA75T65A model high-power IGBT for use in a high-power portable energy storage power supply, achieving the replacement of the IGBT.

Thus, Mr. Shi inquired about Feihong Semiconductor's high-power IGBT company, hoping they could provide a suitable domestic high-power IGBT solution for use in a high-power portable energy storage power supply and be able to replace the FGH75N65SHDT IGBT model from Fairchild.

After understanding the situation, Feihong Semiconductor immediately arranged a team according to Mr. Shi's requirements for the high-power portable energy storage power supply circuit diagram.

They carefully selected and configured appropriate domestic high-power IGBTs that are suitable for high-power portable energy storage power supplies. Considering Mr. Shi’s specific circumstances, it was recommended to use the FHA75T65A model IGBT instead of the FGH75N65SHDT model from Fairchild in the high-power portable energy storage power supply circuit diagram.

Why is the FHA75T65A model IGBT?

Because the FHA75T65A model IGBT not only has very short tail current characteristics but also possesses excellent Vcesat saturation voltage drop and features fast recovery reverse parallel diodes.

Moreover, the FHA75T65A model has a current-voltage parameter characteristic of 75A, 650V, with a typical VCEsat value of 1.75V-typ, <2.0V; ID (Tc=100℃): 75A; BVCES: 650V; IF(A)(Tc=25℃): 150A; IF(A)(Tc=100℃): 75A. This characteristic makes this high-power IGBT particularly suitable for use in high-power portable energy storage power supplies.

Importantly, the FHA75T65A model IGBT has a high acceptance rate in applications for high-power portable energy storage power supplies and provides stable and long-term control.

Of course, as a circuit engineer for a high-power portable energy storage power supply, it is necessary to inquire about the detailed parameters of this domestic high-power IGBT model, FHA75T65A:

The FHA75T65A is a trench-gate N-channel cutoff-type IGBT with 75A, 650V, typical VCEsat value: 1.75V-typ, <2.0V; ID (Tc=100℃): 75A; BVCES: 650V; IF(A)(Tc=25℃): 150A; IF(A)(Tc=100℃): 75A.

Finally, the Shijiazhuang Feihong Semiconductor high-power IGBT company successfully completed Mr. Shi's mission to supply high-power IGBTs.

After testing, Mr. Shi explained his choice of Feihong Semiconductor:

He hoped to find the high-power IGBT model FHA75T65A in Shijiazhuang to improve the performance of the high-power portable energy storage power supply. Mr. Shi, the responsible person of the Shijiazhuang high-power portable energy storage power supply manufacturer, chose Feihong Semiconductor because of its excellent service.

Feihong Semiconductor provides on-site sales services for high-power IGBT manufacturers, solving the need for high-power IGBTs in high-power portable energy storage power supplies. Moreover, the price of domestic high-power IGBTs is reasonable.

Mr. Shi said that Feihong Semiconductor's method of providing high-power IGBTs gave him comfort and satisfaction, and their service attitude was enthusiastic. He will continue to purchase the high-power IGBT model FHA75T65A in the future.

The domestic FHA75T65A model can be used in high-power portable energy storage power supplies. Feihong Semiconductor's high-power IGBT company spares no effort to provide solid component supply guarantees for motor drives, UPS, and other electronic manufacturers. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!