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LED Driver Selection Substitute Daquan recommend
High-frequency inverter electronic technicians need to carefully study several key considerations when replacing the FGH75N65SHDT high-voltage IGBT model. The first is the performance parameters of the high-voltage IGBT, such as whether the rated current can reach 75A and whether the rated voltage can reach 650V. These parameters directly relate to the device's work efficiency.
The 75A and 650V parameters are the focus points for engineers from high-frequency inverter manufacturers searching for domestic high-voltage IGBT replacement manufacturers. They hope to find high-quality high-voltage IGBT manufacturers.
1. Low switching loss
2. ID (Tc=100℃): 75A; BVCES: 650V
3. VCEsat typical value: 1.75V-typ, <2.0V
4. Field N-channel trench gate-off type
5. Equipped with a fast recovery parallel reverse diode, etc.
...
To enhance the power switch capability of the high-frequency inverter circuit, Feihong Semiconductor is very willing to recommend the FHA75T65A high-voltage IGBT model. The 75A and 650V high-voltage IGBT effectively eliminates issues like reduced product efficiency, short product lifespan, and low heat dissipation.
Feihong Semiconductor ensures a pleasant experience for high-frequency inverter production companies by customizing the FHA75T65A high-voltage IGBT. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!









