How to select an IGBT with parameters of 40A and 600V suitable for a high-power portable energy storage power supply?

On February 21, 2023, the IGBT factory of Feihong Semiconductor received a consultation from Miss Ding in Ningde, Fujian.

According to the description: The parameters of 40A and 600V are the focus of engineers at a high-power portable energy storage power supply manufacturer who are exploring pure domestic IGBT alternative factories. They hope to find a quality IGBT factory.

Therefore, Miss Ding consulted Feihong's IGBT factory, hoping it could provide a pure domestic IGBT solution suitable for high-power portable energy storage power supplies, and could replace the FGH40N60SFD IGBT model from Fairchild.

After understanding the situation, the Feihong Semiconductor IGBT factory immediately allocated a team to combine with Miss Ding's circuit requirements for high-power portable energy storage power supplies.

They planned a precise and suitable pure domestic IGBT for high-power portable energy storage power supplies. Based on Miss Ding's environment in Ningde, Fujian, it is recommended to use the FHA40T65A IGBT as a pure domestic alternative to the FGH40N60SFD IGBT model from Fairchild.

Why is the FHA40T65A IGBT model chosen?

Because the FHA40T65A IGBT model not only has positive temperature coefficient characteristics but also features Trench Field Stop technology and excellent Vcesat saturation voltage drop.

In addition, the FHA40T65A model has current and voltage parameter characteristics of 40A and 600V. This characteristic of IGBT is very suitable for use in high-power portable energy storage power supplies.

Importantly, it is indeed reliable and has a good quality IGBT!

Of course, as a circuit engineer for a high-power portable energy storage power supply, you need to understand the detailed parameters of this pure domestic FHA40T65A IGBT:

The FHA40T65A is a trench gate field-stop type IGBT with 40A and 600V. VCEsat typical value: 1.51V, <1.85V, ID (Tc=100℃): 40A; BVCES: 600V; IF(A)(Tc=25℃): 40A; IF(A)(Tc=100℃): 20A.

Finally, the IGBT supply action for Miss Ding was successfully completed by the IGBT factory of Feihong Semiconductor in Ningde, Fujian.

After the trial, Miss Ding explained her reasons for choosing Feihong Semiconductor:

She hoped to find the FHA40T65A IGBT model in Ningde, Fujian to enhance the performance of the high-power portable energy storage power supply. Due to the excellent service, Miss Ding, the person in charge of the high-power portable energy storage power supply manufacturer in Ningde, Fujian, chose Feihong Semiconductor.

Feihong Semiconductor provides the service of direct sales from IGBT manufacturers, solving the IGBT needs for high-power portable energy storage power supplies. Moreover, the quotation for pure domestic IGBTs is reasonable.

Miss Ding said that Feihong Semiconductor's service style demonstrates professionalism and thoroughness, making people feel at ease when entrusting them with the customization of the FHA40T65A IGBT model.

The pure domestic FHA40T65A model can be used in high-power portable energy storage power supplies. Feihong Semiconductor's IGBT factory tries its best to provide the most genuine component supply guarantee for electronic manufacturers such as frequency-fixed hard-switching inverters and uninterruptible power supplies. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!