The continuous upgrading of technology not only increases the demand for high-power switch devices in various technical industries, but also makes it essential to address the need for IGBT single chips that can control and regulate current in critical areas such as high-power portable energy storage power supplies and inverters. In the circuit of high-power portable energy storage power supplies, selecting a high-performance pure domestic IGBT single chip to replace the NCE20TD60BF model is quite important. The quality issues of IGBT single chips, such as low efficiency, poor reliability, and electromagnetic interference, will definitely affect the reliable operation of high-power portable energy storage power supplies, making it very important to find excellent replacement models. When replacing the NCE20TD60BF model IGBT single chip, electronic engineers in the high-power portable energy storage power supply must pay attention to many core indicators. For instance, the performance parameters of the IGBT single chip, such as whether the current reaches 20A and the voltage reaches 650V, directly affect the device's efficiency. Similarly, gate threshold voltage (VGE(th)) is also a major consideration. The previous product circuit diagram of the high-power portable energy storage power supply manufacturer used the NCE20TD60BF model IGBT. At present, there is a desire to seek pure domestic IGBT single chip manufacturers to supply the FHF20T60A model IGBT single chip to replace the NCE20TD60BF model IGBT in high-power portable energy storage power supplies. 1. VCEsat typical value: 1.49V, <1.7V 2. ID (Tc=100℃): 20A; BVCES: 650V 3. Trench Gate Field Stop Type IGBT 4. Equipped with a fast recovery diode in parallel 5. TrenchFieldStopIItechnology, etc. Mr. Feng comprehensively considered and selected Feihong Semiconductor because the FHF20T60A model IGBT single chip ensures the performance of high-power portable energy storage power supplies. The key factor in enhancing the performance of high-power portable energy storage power supply circuits is control capability. The FHF20T60A type IGBT single chip from Feihong Semiconductor, with its powerful parameters of 20A and 650V, ensures solving problems related to low efficiency, poor reliability, and electromagnetic interference. Feihong Semiconductor's solution for IGBT single chips for high-power portable energy storage power supply factories brings peace of mind, and they are enthusiastic about support. It is expected to continue purchasing the FHF20T60A model IGBT single chip in the future. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!