The continuous iteration of technology has gradually increased the requirements for power electronic switch devices in various application industries. The key areas, such as power factor correction and inverter power supply, urgently need solutions for high-power IGBTs that can control and regulate current. In power factor correction circuits, selecting a performance innovative domestic high-power IGBT device to replace the ON Semiconductor NGTB25N120FL2WG model is crucial. Today, high-power IGBT products face issues such as low reliability, electromagnetic interference, and shortened product life, all of which directly relate to the normal operation of power factor correction equipment. Selecting high-quality products for domestic alternatives of high-power IGBTs is extremely critical. When choosing the ON Semiconductor NGTB25N120FL2WG high-power IGBT model, power factor correction technicians should pay attention to its performance parameters, such as whether the rated current reaches 25A and the voltage reaches 1200V. These indicators are directly related to the efficiency of the power factor correction circuit. Breakdown voltage and Vcesat saturation voltage are also important aspects. In many domestic power factor correction enterprises, FHA25T120A has previously replaced the ON Semiconductor NGTB25N120FL2WG model and gained widespread application. It is recommended that you carefully review its detailed product specifications: The FHA25T120A is a trench gate field-stop type IGBT with a rating of 25A and 1200V, typical VCEsat value: 2.05V-typ, <2.45V, ID (Tc=100℃): 25A; BVCES: 1200V; IF(A)(Tc=25℃): 30A; IF(A)(Tc=100℃): 15A. In addition to the low VCEsat characteristic, the FHA25T120A IGBT model also features a fast-recovery diode in parallel and very short tail current. Customers have a high recognition of the FHA25T120A high-power IGBT model, a top-tier product for high-power IGBTs! To enhance the control efficiency of power factor correction circuits, Feihong Semiconductor released the FHA25T120A high-power IGBT. With excellent parameters of 25A and 1200V, it easily resolves issues of low product reliability, electromagnetic interference, and shortened product lifespan. Choosing the FHA25T120A high-power IGBT from Feihong Semiconductor helps power factor correction enterprises solve circuit development problems and ensures stable component supply. Consultation hotline: 400-831-6077, free samples available!