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How to select when choosing high-power IGBT of VCD high-power IGBT manufacturer in stock?

Article Category:IGBT Information Release time:2024-06-27 Number of page views:657 Share:

The core function of VCD lies in the high-power IGBT, so which high-power IGBT manufacturer can replace the FGH75N65SHDT model IGBT for use in the VCD circuit diagram?


On September 6, 2023, the high-power IGBT manufacturer, Feihong Semiconductor, received an inquiry from Mr. Zhan in Zhejiang Province.


According to the description: The parameters of 75A and 650V are the focal points for Mr. Zhan, the technical staff of the VCD manufacturer, when searching for a domestic high-power IGBT replacement. His intention is to find a high-quality high-power IGBT manufacturer.


In summary, Mr. Zhan consulted Feihong Semiconductor with the intention of providing a suitable domestic high-power IGBT solution for VCD, capable of replacing the FGH75N65SHDT model IGBT.


After understanding this, the Feihong Semiconductor high-power IGBT manufacturer immediately dispatched its team to address Mr. Zhan's VCD circuit diagram requirements.


An appropriate and suitable domestic high-power IGBT was arranged for use in VCD. Considering Mr. Zhan's situation in Zhejiang, it is recommended to use the FHA75T65A instead of the FGH75N65SHDT model IGBT in the VCD circuit diagram.


Why is the FHA75T65A model IGBT chosen?


Because the FHA75T65A model IGBT not only has a very short tail current characteristic but also features positive temperature coefficients and Trench Field Stop II technology.


Most importantly, the FHA75T65A model has current and voltage parameter characteristics of 75A and 650V, making this high-power IGBT highly suitable for use in VCD.


Importantly, the high-power IGBT in VCD control is stable and reliable, with extremely good quality!


Of course, as a VCD circuit diagram technician, one must understand the detailed parameters of this FHA75T65A domestic high-power IGBT:


The FHA75T65A is a channel N-type trench gate cutoff type with 75A, 650V, typical VCEsat value: 1.75V-typ, <2.0V, ID (Tc=100℃): 75A; BVCES: 650V; IF (A) (Tc=25℃): 150A; IF (A) (Tc=100℃): 75A.


Finally, the Zhejiang Feihong Semiconductor high-power IGBT manufacturer successfully completed Mr. Zhan's high-power IGBT supply mission.


After testing the sample, Mr. Zhan explained the reasons for choosing Feihong Semiconductor:


Mr. Zhan selected Feihong Semiconductor after evaluation because the FHA75T65A model is used in VCD.


Feihong Semiconductor provides direct sales services for domestic high-power IGBT manufacturers, solving the required high-power IGBT for VCD, and the quotations for domestic high-power IGBT are reasonable.


Mr. Zhan stated that Feihong Semiconductor works diligently and sincerely in customizing high-power IGBTs, hoping to maintain high morale and provide excellent quality parameters for the FHA75T65A model.


The domestic FHA75T65A model is available for VCD. Feihong Semiconductor high-power IGBT manufacturers fully support electronic component suppliers such as half-bridge inverters and portable emergency energy storage power supplies. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!

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