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Application of FHA60T65A in live broadcast mobile energy storage power supply: what are the surprises brought by pure domestic voltage resistant IGBT?

Article Category:IGBT Information Release time:2024-06-21 Number of page views:748 Share:
With the increasing advancement of technology, the demand for compound power semiconductor devices in various commercial fields has been increasing year by year. It is worth mentioning that in areas such as live mobile energy storage power supplies and motor drives, the need for devices that control and regulate current — namely, voltage-resistant IGBTs — is urgent. How to select a purely domestically produced product to replace the FGH60N60SMD model used in live mobile energy storage power supply circuits is particularly critical. In today's market, low-quality voltage-resistant IGBT products are widespread, including declining brand reputation, poor reliability, electromagnetic interference, etc. These problems not only seriously hinder the normal operation of live mobile energy storage power supply equipment but also increase maintenance costs. From this perspective, finding high-quality voltage-resistant IGBT replacement models is crucial. In live mobile energy storage power supply electronics engineering, engineers must focus on the performance indicators when selecting the FGH60N60SMD model voltage-resistant IGBT, such as whether the current can meet 60A and whether the rated voltage can reach 650V. These indicators are directly related to the work efficiency of the live mobile energy storage power supply circuit. At this point, the gate threshold voltage (VGE(th)) and the current rise rate (di/dt) are also important components. A strong gate threshold voltage (VGE(th)) performance can improve the quality of live mobile energy storage power supply. Relying on the needs of live mobile energy storage power supply electronic engineers, we share a voltage-resistant IGBT product: FHA60T65A. Its technical parameters precisely match the FGH60N60SMD model, and all relevant details can be considered: 1. RoHS compliant product 2. ID (Tc=100℃): 60A; BVCES: 650V 3. VCEsat typical value: 1.75V-typ, <2.0V 4. Trench Gate Field Stop Type IGBT 5. TrenchFieldStop technology, etc. pic Voltage-resistant IGBTs play a stable role in controlling live mobile energy storage power supplies with excellent quality! Feihong Semiconductor shares the selection of the FHA60T65A model voltage-resistant IGBT to enhance the control capability of the live mobile energy storage power supply circuit. This 60A, 650V voltage-resistant IGBT can effectively solve problems such as declining product brand reputation, poor reliability, and electromagnetic interference. Feihong Semiconductor is committed to providing practical services in customizing voltage-resistant IGBTs, producing and selling high-quality FHA60T65A model parameters. It can provide solid component supply guarantees for areas such as live mobile energy storage power supplies and medium frequency inverters. For more information, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!

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