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Why can the new star of high-voltage IGBT discrete products, FHA75T65A, take the place of Fairchild's FGH75N65SHDT?

Article Category:IGBT Information Release time:2024-05-28 Number of page views:591 Share:
With the continuous improvement of technology, the demand for insulated gate bipolar transistors (IGBTs) in various production fields has increased significantly. Especially in industries such as portable emergency energy storage power supplies and forklifts, the need for devices that control and regulate current - namely, high-voltage IGBT single tubes - is urgent. How to select a domestic alternative to the Fairchild FGH75N65SHDT model for use in portable emergency energy storage power supply circuits is particularly important. High-voltage IGBT single tube products on the market commonly suffer from issues such as reduced reliability and poor heat dissipation. These core components directly affect the normal operation of portable emergency energy storage power equipment. Therefore, providing high-quality, stable-performance high-voltage IGBT single tubes is crucial for market control. In portable emergency energy storage power supply electronics engineering, designers must pay close attention to the performance indicators of the selected Fairchild FGH75N65SHDT model high-voltage IGBT single tube, such as whether the current can meet 75A and whether the rated voltage reaches 650V. These indicators are directly related to the operational efficiency of the portable emergency energy storage power supply circuit. It is particularly important to focus on the breakdown voltage (BVCES) and current rise rate, as advanced breakdown voltage (BVCES) performance can enhance the quality of the portable emergency energy storage power supply. For electronic designers aiming to standardize portable emergency energy storage power supplies, the FHA75T65A high-voltage IGBT single tube product is a rational choice. Its technical specifications are suitable for the Fairchild FGH75N65SHDT, with detailed parameters as follows: 1. N-channel trench gate-off type 2. ID (Tc=100℃): 75A; BVCES: 650V 3. VCEsat typical value: 1.75V-typ, <2.0V 4. RoHS compliant product 5. Trench-FS technology, etc. pic Ms. Xie, the management supervisor of a portable emergency energy storage power supply manufacturer in Hegang City, chose Fei Hong Semiconductor due to its excellent service, aiming to find the FHA75T65A high-voltage IGBT single tube model to enhance the performance of the portable emergency energy storage power supply. To enhance the conversion current performance of the portable emergency energy storage power supply circuit, Fei Hong Semiconductor is very willing to recommend the use of the high-voltage IGBT single tube model FHA75T65A. This 75A, 650V high-voltage IGBT single tube can truly resolve unknown problems such as reduced product reliability and poor heat dissipation. Fei Hong Semiconductor's FHA75T65A high-voltage IGBT single tube model is reliable for solving circuit development issues for electronic manufacturers. It guarantees applications such as active inverters and standby UPS systems. For free sample services, please call 400-831-6077!

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